Power Switching Device Siliup SP25N50TQ 500V N Channel Planar MOSFET with Low RDSon and TO220 Package
Key Attributes
Model Number:
SP25N50TQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
210mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
217pF
Input Capacitance(Ciss):
3.468nF
Pd - Power Dissipation:
270W
Gate Charge(Qg):
63nC@10V
Mfr. Part #:
SP25N50TQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP25N50TQ is a 500V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET features fast switching speeds, low gate charge, and a low RDS(on). It is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters and synchronous rectification. The device comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Technology: Planar MOSFET
- Channel Type: N-Channel
- Package: TO-220-3L
- Marking: 25N50 (Device Code), *: Week Code
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 500 | V | ||||
| RDS(on) TYP | @10V | 0.21 | ||||
| ID | 25 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 500 | V | ||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 25 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 16.6 | A | ||
| Pulsed Drain Current | IDM | 100 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 1620 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 270 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.46 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 500 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 400V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 12A | - | 0.21 | 0.26 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =25V, VGS = 0V, f = 1.0MHz | - | 3468 | - | pF |
| Output Capacitance | Coss | - | 217 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 12 | - | pF | |
| Total Gate Charge | Qg | VDS=400V , VGS=10V , ID=20A | - | 63 | - | nC |
| Gate-Source Charge | Qgs | - | 16 | - | ||
| Gate-Drain Charge | Qgd | - | 24 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 250V, VDS =10V, RG=25, ID=12A | - | 37 | - | nS |
| Rise Time | tr | - | 64 | - | ||
| Turn-Off Delay Time | td(off) | - | 86 | - | ||
| Fall Time | tf | - | 46 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS =1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 25 | A | |
| Body Diode Reverse Recovery Time | trr | IS = 25A, dIF/dt = 100A/us | - | 495 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 6250 | - | nC | |
| Package Information (TO-220-3L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.400 - 4.600 | 0.173 - 0.181 | ||||
| A1 | 2.250 - 2.550 | 0.089 - 0.100 | ||||
| b | 0.710 - 0.910 | 0.028 - 0.036 | ||||
| b1 | 1.170 - 1.370 | 0.046 - 0.054 | ||||
| c | 0.330 - 0.650 | 0.013 - 0.026 | ||||
| c1 | 1.200 - 1.400 | 0.047 - 0.055 | ||||
| D | 9.910 - 10.250 | 0.390 - 0.404 | ||||
| E | 8.950 - 9.750 | 0.352 - 0.384 | ||||
| E1 | 12.650 - 13.050 | 0.498 - 0.514 | ||||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 - 5.180 | 0.196 - 0.204 | ||||
| F | 2.650 - 2.950 | 0.104 - 0.116 | ||||
| H | 7.900 - 8.100 | 0.311 - 0.319 | ||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| L | 12.900 - 13.400 | 0.508 - 0.528 | ||||
| L1 | 2.850 - 3.250 | 0.112 - 0.128 | ||||
| V | 6.900 REF. | 0.276 REF. | ||||
| 3.400 - 3.800 | 0.134 - 0.150 | |||||
Note: 1. The test condition is VDD=50V, VGS=10V, L=10mH, RG=30.
2504101957_Siliup-SP25N50TQ_C42372384.pdf
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