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quality Dual N Channel MOSFET Siliup SP010N70DP8 100V 70mRDSon at 10V and 85mRDSon at 4.5V for power switching factory
quality Dual N Channel MOSFET Siliup SP010N70DP8 100V 70mRDSon at 10V and 85mRDSon at 4.5V for power switching factory

Dual N Channel MOSFET Siliup SP010N70DP8 100V 70mRDSon at 10V and 85mRDSon at 4.5V for power switching

Key Attributes
Model Number: SP010N70DP8
Product Custom Attributes
Pd - Power Dissipation:
1.3W
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
4A
RDS(on):
70mΩ@10V;85mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
2 N-Channel
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
1.1nF
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
SP010N70DP8
Package:
SOP-8L
Product Description

Product Overview

The SP010N70DP8 is a 100V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) with 70m at 10V and 85m at 4.5V. This MOSFET is 100% single pulse avalanche energy tested and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP010N70DP8
  • Channel Type: Dual N-Channel MOSFET
  • Package: SOP-8L
  • Marking: 10N7D

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
V(BR)DSS 100 V
RDS(on)TYP @10V 70 m
RDS(on)TYP @4.5V 85 m
ID 4 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID 4 A
Pulsed Drain Current IDM 16 A
Power Dissipation PD 1.3 W
Thermal Resistance Junction-to-Ambient RJA 96 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 100 - - V
Drain-Source Leakage Current IDSS VDS=80V , VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.2 1.8 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=2A - 70 100 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=1A - 85 110 m
Dynamic Characteristics
Input Capacitance Ciss VDS=50V , VGS=0V , f=1MHz - 1100 - pF
Output Capacitance Coss - 55 -
Reverse Transfer Capacitance Crss - 40 -
Total Gate Charge Qg VDS=50V , VGS=10V , ID=3A - 12 - nC
Gate-Source Charge Qgs - 2.9 -
Gate-Drain Charge Qgd - 1.8 -
Switching Characteristics
Turn-On Delay Time Td(on) VDD=50V VGS=10V , RG=3, ID=3A - 3.9 - nS
Rise Time Tr - 26 -
Turn-Off Delay Time Td(off) - 16.2 -
Fall Time Tf - 8.9 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A - - 1.2 V
Package Information (SOP-8L)
Symbol Dimensions (mm) Min. Max. Reference
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e 1.27 REF.
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
0 8

2504101957_Siliup-SP010N70DP8_C41355078.pdf

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