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quality Low on resistance Siliup SP60P30NK 60V P Channel MOSFET with surface mount design and ROHS compliance factory
quality Low on resistance Siliup SP60P30NK 60V P Channel MOSFET with surface mount design and ROHS compliance factory

Low on resistance Siliup SP60P30NK 60V P Channel MOSFET with surface mount design and ROHS compliance

Key Attributes
Model Number: SP60P30NK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
28A
RDS(on):
30mΩ@10V;38mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 P-Channel
Output Capacitance(Coss):
179pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
2.417nF
Gate Charge(Qg):
46.5nC@10V
Mfr. Part #:
SP60P30NK
Package:
PDFNWB-8L(5x6)
Product Description

Product Overview

The SP60P30NK is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. Featuring fast switching speeds, a surface mount package, and ROHS compliance, this MOSFET is ideal for applications such as DC-DC converters and motor control. It boasts a low on-resistance and is 100% tested for single pulse avalanche energy, ensuring reliability in demanding environments.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP60P30NK
  • Channel Type: P-Channel
  • Voltage Rating: 60V
  • Package: PDFN5X6-8L
  • Certifications: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -60 - - V
Static Drain-Source On-Resistance RDS(ON) VGS =-10V, ID =-5A - 30 40 m
Static Drain-Source On-Resistance RDS(ON) VGS =-4.5V, ID =-4A - 38 50 m
Continuous Drain Current ID (Tc=25C) - - -28 A
Continuous Drain Current ID (Tc=100C) - - -18 A
Pulse Drain Current IDM Tested - - -120 A
Single pulsed avalanche energy EAS - - 144 mJ
Power Dissipation PD (Tc=25C) - - 50 W
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.7 -2.5 V
Input Capacitance Ciss VDS=-20V , VGS=0V , f=1MHz - 2417 - pF
Output Capacitance Coss - 179 - pF
Reverse Transfer Capacitance Crss - 120 - pF
Total Gate Charge Qg VDS=-20V , VGS=-10V , ID=-6.2A - 46.5 - nC
Gate-Source Charge Qgs - 9.1 - nC
Gate-Drain Charge Qg d - 9.2 - nC
Turn-On Delay Time Td(on) VDD=-20V, VGS=-10V , RG=3, ID=-6.2A - 9.8 - nS
Rise Time Tr - 6.1 - nS
Turn-Off Delay Time Td(off) - 44 - nS
Fall Time Tf - 12.7 - nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - -30 A
Reverse recover time Trr IS=-20A, di/dt=100A/us, TJ=25 - 21 - nS
Reverse recovery charge Qrr - 12 - nC
Package Information (PDFN5X6-8L) Dimensions In Millimeters Dimensions In Inches
Symbol Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2504101957_Siliup-SP60P30NK_C41355215.pdf

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