60V N Channel MOSFET Siliup SP60N05AHNK with Halogen Free Surface Mount and Avalanche Energy Test

Key Attributes
Model Number: SP60N05AHNK
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
275pF
Number:
1 N-channel
Output Capacitance(Coss):
482pF
Pd - Power Dissipation:
78W
Input Capacitance(Ciss):
5.572nF
Gate Charge(Qg):
92nC@10V
Mfr. Part #:
SP60N05AHNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP60N05AHNK is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching speed, a surface mount package, and is ROHS Compliant & Halogen-Free. It is 100% Single Pulse avalanche energy Tested and is suitable for applications such as DC-DC Converters and Motor Control. The MOSFET is available in a PDFN5X6-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: SP60N05AHNK
  • Channel Type: N-Channel
  • Compliance: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test
  • Package: PDFN5X6-8L
  • Device Code: 60N05AH

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Breakdown Voltage (Drain-Source) V(BR)DSS 60 V
On-Resistance (Typical) RDS(on)TYP @10V 4.5 m
Continuous Drain Current ID 100 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25, unless otherwise noted) 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID 100 A
Continuous Drain Current (Tc=100C) ID 67 A
Pulse Drain Current Tested IDM 400 A
Single Pulsed Avalanche Energy EAS (VDD=30V,VGS =10V,L = 0.5mH, Rg=25) 625 mJ
Power Dissipation (Tc=25C) PD 78 W
Thermal Resistance Junction-to-Case RJC 1.6 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 60 - - V
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =40A - 4.5 5.7 m
Input Capacitance Ciss VDS=30V , VGS=0V , f=1MHz - 5572 - pF
Output Capacitance Coss - 482 - pF
Reverse Transfer Capacitance Crss - 275 - pF
Total Gate Charge Qg VDS=30V , VGS=10V , ID=30A - 92 - nC
Gate-Source Charge Qgs - 9 -
Gate-Drain Charge Qg d - 14 -
Turn-On Delay Time Td(on) VDD=30V, VGS=10V , RG=3, ID=30A - 12 - nS
Rise Time Tr - 8 -
Turn-Off Delay Time Td(off) - 49 -
Fall Time Tf - 14 -
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 100 A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25 - 31 - nS
Reverse recovery charge Qrr - 22 - nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2504101957_Siliup-SP60N05AHNK_C41355056.pdf

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