20V N Channel MOSFET Siliup SP2080TH Featuring Low Gate Charge and Fast Switching in TO 252 Package

Key Attributes
Model Number: SP2080TH
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.8mΩ@4.5V;4mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
355pF
Number:
1 N-channel
Output Capacitance(Coss):
398pF
Pd - Power Dissipation:
39W
Input Capacitance(Ciss):
3.18nF
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
SP2080TH
Package:
TO-252-2L
Product Description

Product Overview

The SP2080TH is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for efficiency, it features fast switching, low gate charge, and low RDS(on) at various gate voltages (3.8m@4.5V, 4.0m@2.5V). This MOSFET is 100% tested for single pulse avalanche energy, making it ideal for DC-DC converters, high-frequency switching, and synchronous rectification applications. The device is supplied in a TO-252 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP2080TH
  • Channel Type: N-Channel
  • Package: TO-252
  • Device Code: 2080

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 20 V
On-Resistance RDS(on) 4.5V 3.8 m
On-Resistance RDS(on) 2.5V 4.0 m
Drain Current ID 80 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) 20 V
Gate-Source Voltage VGS (Ta=25) 12 V
Continuous Drain Current ID (TC=25) 80 A
Continuous Drain Current ID (TC=100) 53 A
Pulsed Drain Current IDM 320 A
Single Pulse Avalanche Energy EAS 100 mJ
Power Dissipation PD (TC=25) 39 W
Thermal Resistance Junction-to-Case RJC 3.2 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 20 - - V
Drain-Source Leakage Current IDSS VDS=16V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 0.4 0.7 1.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=20A - 3.8 5.0 m
Static Drain-Source On-Resistance RDS(ON) VGS=2.5V , ID=15A - 4.0 5.5 m
Input Capacitance Ciss VDS=10V , VGS=0V , f=1MHz - 3180 - pF
Output Capacitance Coss - 398 -
Reverse Transfer Capacitance Crss - 355 -
Total Gate Charge Qg VDS=10V , VGS=10V , ID=20A - 36 - nC
Gate-Source Charge Qgs - 6 -
Gate-Drain Charge Qg d - 10 -
Turn-On Delay Time Td(on) VDD=10V, VGS=4.5V , RG=3, ID=2A - 13 - nS
Rise Time Tr - 31 -
Turn-Off Delay Time Td(off) - 73 -
Fall Time Tf - 92 -
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 80 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 13 - nS
Reverse Recovery Charge Qrr - 4 - nC

Package Dimensions (TO-252):

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 1.700 0.055 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 0.000 0.012
V 5.350 REF. 0.211 REF.

2504101957_Siliup-SP2080TH_C41354839.pdf

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