power management solution featuring Siliup SP40N08NK 40V N Channel MOSFET with fast switching speeds
Key Attributes
Model Number:
SP40N08NK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V;11mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
158pF
Number:
1 N-channel
Output Capacitance(Coss):
210pF
Input Capacitance(Ciss):
1.785nF
Pd - Power Dissipation:
35W
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
SP40N08NK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP40N08NK is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching speeds, a surface mount PDFN5X6-8L package, and is ROHS Compliant & Halogen-Free. The device is 100% tested for single pulse avalanche energy, making it suitable for DC-DC converters and motor control applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP40N08NK
- Technology: N-Channel MOSFET
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
- Package Type: PDFN5X6-8L
- Device Code: 40N08
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on) | @10V | 8 | m | |||
| RDS(on) | @4.5V | 11 | m | |||
| Continuous Drain Current | ID | 50 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | 40 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | 50 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | 33 | A | ||
| Pulse Drain Current Tested | IDM | 200 | A | |||
| Single pulsed avalanche energy | EAS | 51 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 35 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.6 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =12A | - | 8 | 12 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =6A | - | 11 | 18 | m |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 1785 | - | pF |
| Output Capacitance | Coss | - | 210 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 158 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=10A | - | 31 | - | nC |
| Gate-Source Charge | Qgs | - | 4 | - | nC | |
| Gate-Drain Charge | Qg d | - | 11 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=20V ,VGS=10V , RG=3, ID=10A | - | 6 | - | nS |
| Rise Time | Tr | - | 16 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 31 | - | nS | |
| Fall Time | Tf | - | 15 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 50 | A | |
| Reverse recover time | Trr | IS=10A, di/dt=100A/us, TJ=25 | - | 31 | - | nS |
| Reverse recovery charge | Qrr | - | 23 | - | nC | |
| Package Dimensions (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
2504101957_Siliup-SP40N08NK_C41355047.pdf
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