60 volt p channel mosfet for power switching applications featuring low gate charge Siliup SP60P11P8
Key Attributes
Model Number:
SP60P11P8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
12A
RDS(on):
11.5mΩ@10V;15mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
364pF
Number:
1 P-Channel
Output Capacitance(Coss):
489pF
Pd - Power Dissipation:
5.5W
Input Capacitance(Ciss):
7.7nF
Gate Charge(Qg):
85.5nC@10V
Mfr. Part #:
SP60P11P8
Package:
SOP-8L
Product Description
Product Overview
The SP60P11P8 is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching speeds, low gate charge, and low RDS(on). Its 100% single pulse avalanche energy test ensures reliability. This MOSFET is suitable for hard-switched and high-frequency circuits, including Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP60P11P8
- Device Code: 60P11
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | -60 | V | |||
| On-Resistance (Typ.) | RDS(on)TYP | @-10V | 11.5 | 15 | m | |
| Continuous Drain Current | ID | -12 | A | |||
| On-Resistance (Typ.) | RDS(on)TYP | @-4.5V | 15 | 19 | m | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -12 | A | |||
| Pulsed Drain Current | IDM | -48 | A | |||
| Single Pulse Avalanche Energy | EAS | 342 | mJ | |||
| Power Dissipation | PD | 5.5 | W | |||
| Thermal Resistance (Junction-to-Ambient) | RJA | 22.7 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-6A | 11.5 | 15 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-4A | 15 | 19 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 7700 | pF | ||
| Output Capacitance | Coss | 489 | pF | |||
| Reverse Transfer Capacitance | Crss | 364 | pF | |||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-10A | 85.5 | nC | ||
| Gate-Source Charge | Qgs | 12.1 | nC | |||
| Gate-Drain Charge | Qg d | 23.2 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-30V VGS=-10V , RG=3, ID=-10A | 9.8 | nS | ||
| Rise Time | Tr | 6.1 | nS | |||
| Turn-Off Delay Time | Td(off) | 44 | nS | |||
| Fall Time | Tf | 12.7 | nS | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | -1.2 | V | ||
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | ||||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP60P11P8_C41355205.pdf
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