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quality 20V P Channel MOSFET Siliup SP2006KT5 Featuring 2KV ESD Protection and Surface Mount SOT 523 Package factory
quality 20V P Channel MOSFET Siliup SP2006KT5 Featuring 2KV ESD Protection and Surface Mount SOT 523 Package factory

20V P Channel MOSFET Siliup SP2006KT5 Featuring 2KV ESD Protection and Surface Mount SOT 523 Package

Key Attributes
Model Number: SP2006KT5
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
RDS(on):
650mΩ@4.5V;850mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 P-Channel
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
75pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.25nC@4.5V
Mfr. Part #:
SP2006KT5
Package:
SOT-523
Product Description

Product Overview

The SP2006KT5 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It features a surface mount package and ESD protection of 2KV. This MOSFET is ideal for applications such as battery switches and DC/DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP2006KT5
  • Channel Type: P-Channel
  • Voltage Rating: 20V
  • Package: SOT-523
  • ESD Protection: 2KV
  • Device Code: 06K

Technical Specifications

Parameter Symbol Conditions Value Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
Static Drain-Source On-Resistance RDS(on)TYP @-4.5V 650 m
@-2.5V 850 m
Continuous Drain Current ID -0.66 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID -0.66 A
Pulse Drain Current IDM Tested -2.64 A
Power Dissipation PD 150 mW
Thermal Resistance Junction-to-Ambient RJA 833 C/W
Storage Temperature Range TSTG -55 to 150 C
Operating Junction Temperature Range TJ -55 to 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -20 V
Drain-Source Leakage Current IDSS VDS=-16V , VGS=0V - -1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V - 10 uA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -0.35 to -1.00 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-500mA 650 to 750 m
VGS=-2.5V , ID=-200mA 850 to 1000 m
Input Capacitance Ciss VDS=-10V , VGS=0V , f=1MHz 75 pF
Output Capacitance Coss 20
Reverse Transfer Capacitance Crss 14
Total Gate Charge Qg VDS=-10V , VGS=-4.5V , ID=-0.5A 1.25 nC
Gate-Source Charge Qgs 0.35
Gate-Drain Charge Qg 0.27
Turn-On Delay Time td(on) VDD=-10V VGS=-4.5V , RG=3 , RL=2.5 5 nS
Turn-On Rise Time tr 19
Turn-Off Delay Time td(off) 15
Turn-Off Fall Time tf 24
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Package Information (SOT-523)
Dimension Symbol Min Max Unit
A 0.700 0.900 mm
A1 0.000 0.100 mm
A2 0.700 0.800 mm
b1 0.150 0.250 mm
b2 0.250 0.350 mm
C 0.100 0.200 mm
D 1.500 1.700 mm
E 0.700 0.900 mm
E1 1.450 1.750 mm
e 0.500 TYP mm
e1 0.900 1.100 mm
L 0.400 REF mm
L1 0.260 0.460 mm
0 8

2504101957_Siliup-SP2006KT5_C41355141.pdf

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