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quality 40V P Channel MOSFET Siliup SP40P08NJ with Typical On Resistance of 8.6 Milliohm at Negative 10 Volts factory
quality 40V P Channel MOSFET Siliup SP40P08NJ with Typical On Resistance of 8.6 Milliohm at Negative 10 Volts factory

40V P Channel MOSFET Siliup SP40P08NJ with Typical On Resistance of 8.6 Milliohm at Negative 10 Volts

Key Attributes
Model Number: SP40P08NJ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
33A
RDS(on):
8.6mΩ@10V;13mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
289pF
Number:
1 P-Channel
Output Capacitance(Coss):
329pF
Input Capacitance(Ciss):
3.8nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
69nC@10V
Mfr. Part #:
SP40P08NJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP40P08NJ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for efficiency, it features fast switching speeds and low on-resistance, with typical values of 8.6m at -10V and 13m at -4.5V. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and power management systems. It is supplied in a compact PDFN3X3-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: SP40P08NJ
  • Package Type: PDFN3X3-8L
  • Device Code: 40P08

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -40 V
On-Resistance RDS(on)TYP @-10V 8.6 m
On-Resistance RDS(on)TYP @-4.5V 13 m
Continuous Drain Current ID -33 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25) -40 V
Gate-Source Voltage VGSS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25C) -33 A
Continuous Drain Current ID (Tc=100C) -22 A
Pulse Drain Current IDM Tested -132 A
Single Pulse Avalanche Energy EAS 1 144 mJ
Power Dissipation PD (Tc=25C) 60 W
Thermal Resistance Junction-to-Case RJC 2.08 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -40 - - V
Drain-Source Leakage Current IDSS VDS=-32V , VGS=0V , TJ=25 - - -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-10A - 8.6 11 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-8A - 13 18 m
Input Capacitance Ciss VDS=-20V , VGS=0V , f=1MHz - 3800 - pF
Output Capacitance Coss VDS=-20V , VGS=0V , f=1MHz - 329 - pF
Reverse Transfer Capacitance Crss VDS=-20V , VGS=0V , f=1MHz - 289 - pF
Total Gate Charge Qg VDS=-20V , VGS=-10V , ID=-20A - 69 - nC
Gate-Source Charge Qgs VDS=-20V , VGS=-10V , ID=-20A - 11 - nC
Gate-Drain Charge Qg d VDS=-20V , VGS=-10V , ID=-20A - 13 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-20V, VGS=-10V , RG=3, ID=-20A - 11 - nS
Rise Time Tr VDD=-20V, VGS=-10V , RG=3, ID=-20A - 81 - nS
Turn-Off Delay Time Td(off) VDD=-20V, VGS=-10V , RG=3, ID=-20A - 95 - nS
Fall Time Tf VDD=-20V, VGS=-10V , RG=3, ID=-20A - 73 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 - - -1.2 V
Maximum Body-Diode Continuous Current IS - - -33 A
Reverse recover time Trr IS=-20A, di/dt=100A/us, TJ=25 - 21 - nS
Reverse recovery charge Qrr IS=-20A, di/dt=100A/us, TJ=25 - 12 - nC

Note:
1. The EAS test condition is VDD=-20V, VG=-10V, L=0.5mH, Rg=25


2504101957_Siliup-SP40P08NJ_C41355192.pdf

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