20V P Channel MOSFET Siliup SP2016NQ Featuring Low On Resistance and PDFN2X2 6L Compact Package
Key Attributes
Model Number:
SP2016NQ
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@4.5V;23mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
236pF
Number:
1 P-Channel
Output Capacitance(Coss):
255pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
1.275nF
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
SP2016NQ
Package:
PDFN-6L(2x2)
Product Description
Product Overview
The SP2016NQ is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power management functions and DC-DC converters, this MOSFET features low on-resistance and low input capacitance. It is supplied in a PDFN2X2-6L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: PDFN2X2-6L
- Device Code: 2016
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | -4.5V | 16 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | -2.5V | 23 | m | ||
| Continuous Drain Current | ID | -13 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | -16 | A | |||
| Pulsed Drain Current | IDM | -64 | A | |||
| Power Dissipation | PD | 2.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 50 | /W | |||
| Operating Junction Temperature Range | TSTG | -55 | +150 | |||
| Storage Temperature Range | TJ | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -0.4 | -0.7 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-5A | 16 | 20 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-2.5V, ID =-4A | 23 | 35 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-6V , VGS=0V , f=1MHz | 1275 | pF | ||
| Output Capacitance | Coss | 255 | pF | |||
| Reverse Transfer Capacitance | Crss | 236 | pF | |||
| Total Gate Charge | Qg | VDS=-6V , VGS=-4.5V , ID=-5A | 14 | nC | ||
| Gate-Source Charge | Qgs | 2.3 | nC | |||
| Gate-Drain Charge | Qgd | 3.6 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-6V VGS=-4.5V , RG=1, ID=-4A | 26 | nS | ||
| Rise Time | Tr | 24 | nS | |||
| Turn-Off Delay Time | Td(off) | 45 | nS | |||
| Fall Time | Tf | 20 | nS | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| PDFN2X2-6L Package Information | ||||||
|---|---|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Min. | Typ. | Max. | ||
| A | 0.70 | 0.75 | 0.80 | |||
| A1 | 0.02 | 0.05 | ||||
| b | 0.25 | 0.30 | 0.35 | |||
| b1 | 0.20REF | |||||
| c | 0.203REF | |||||
| D | 1.90 | 2.00 | 2.10 | |||
| D1 | 0.08 | 0.125 | 0.18 | |||
| D2 | 0.85 | 0.90 | 0.95 | |||
| D3 | 0.25 | 0.30 | 0.35 | |||
| D4 | 0.33 | 0.375 | 0.43 | |||
| e | 0.65BSC | |||||
| Nd | 1.30BSC | |||||
| E | 1.90 | 2.00 | 2.10 | |||
| E2 | 0.95 | 1.00 | 1.05 | |||
| E3 | 0.55 | 0.60 | 0.65 | |||
| L | 0.20 | 0.25 | 0.30 | |||
| h | 0.25REF | |||||
2504101957_Siliup-SP2016NQ_C41355005.pdf
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