Low Rdson 100V P Channel MOSFET Siliup SP010P80TH Suitable for Load Switching and Power Management
Key Attributes
Model Number:
SP010P80TH
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@10V;98mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
76pF
Number:
1 P-Channel
Output Capacitance(Coss):
129pF
Input Capacitance(Ciss):
3.329nF
Pd - Power Dissipation:
70W
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
SP010P80TH
Package:
TO-252
Product Description
Product Overview
The SP010P80TH is a 100V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, with 100% single pulse avalanche energy testing. This MOSFET is suitable for applications such as DC-DC converters and load switching.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 010P80
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | -100 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @-10V | 80 | m | ||
| On-Resistance (Typical) | RDS(on)TYP | @-4.5V | 98 | m | ||
| Continuous Drain Current | ID | -20 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | -20 | A | ||
| Continuous Drain Current | ID | (TC=100) | -13 | A | ||
| Pulsed Drain Current | IDM | -80 | A | |||
| Single Pulse Avalanche Energy | EAS | 90 | mJ | |||
| Power Dissipation | PD | (TC=25) | 70 | W | ||
| Thermal Resistance (Junction-to-Case) | RJC | 1.78 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -100 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-80V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-15A | 80 | 100 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-15A | 98 | 130 | m | |
| Input Capacitance | Ciss | VDS=-50V , VGS=0V , f=1MHz | 3329 | pF | ||
| Output Capacitance | Coss | 129 | pF | |||
| Reverse Transfer Capacitance | Crss | 76 | pF | |||
| Total Gate Charge | Qg | VDS=-50V , VGS=-10V , ID=-15A | 46 | nC | ||
| Gate-Source Charge | Qgs | 9 | nC | |||
| Gate-Drain Charge | Qg d | 6 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-50V,VGS=-10V,RG=9, ID=-15A | 15 | nS | ||
| Rise Time | Tr | 72 | nS | |||
| Turn-Off Delay Time | Td(off) | 35 | nS | |||
| Fall Time | Tf | 56 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -20 | A | |||
| Reverse Recovery Time | Trr | IS=-15A, di/dt=100A/us, TJ=25 | 88 | nS | ||
| Reverse Recovery Charge | Qrr | 66 | nC | |||
Package Information (TO-252):
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. |
Circuit Diagram: 1:G 2:D 3:S
Marking: 010P80 :Device Code, ** :Week Code
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP010P80TH | TO-252 | 2500 |
2504101957_Siliup-SP010P80TH_C41355221.pdf
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