30V Dual P Channel MOSFET Siliup SP30P06DNK with Halogen Free ROHS Compliance and PDFN5X6 8L Package
Product Overview
The SP30P06DNK is a 30V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% single pulse avalanche energy tested and is suitable for applications such as DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP30P06DNK
- Package: PDFN5X6-8L
- Certifications: ROHS Compliant & Halogen-Free
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) | @-10V | 6.5 | 8 | m | ||
| RDS(on) | @-4.5V | 10.5 | 15 | m | ||
| ID | -50 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | -50 | A | |||
| Continuous Drain Current (Tc=100C) | ID | -33 | A | |||
| Pulse Drain Current Tested | IDM | -200 | A | |||
| Single pulsed avalanche energy | EAS | 125 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 40 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 3.1 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-15A | 6.5 | 8 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-10A | 10.5 | 15 | m | |
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 3456 | pF | ||
| Output Capacitance | Coss | 387 | pF | |||
| Reverse Transfer Capacitance | Crss | 335 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-20A | 62 | nC | ||
| Gate-Source Charge | Qgs | 12 | nC | |||
| Gate-Drain Charge | Qgd | 14 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-15V ,VGS=-10V , RG=3, ID=-20A | 15 | nS | ||
| Rise Time | Tr | 61 | nS | |||
| Turn-Off Delay Time | Td(off) | 54 | nS | |||
| Fall Time | Tf | 65 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -50 | A | |||
| Reverse recover time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | 25 | nS | ||
| Reverse recovery charge | Qrr | 12 | nC | |||
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| A3 | 0.254 REF. | 0.010 REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | ||||
| E | 5.974 - 6.126 | 0.235 - 0.241 | ||||
| D1 | 1.470 - 1.870 | 0.058 - 0.074 | ||||
| D2 | 0.470 - 0.870 | 0.019 - 0.034 | ||||
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | ||||
| D3 | 4.824 - 4.976 | 0.190 - 0.196 | ||||
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | ||||
| k | 1.190 - 1.390 | 0.047 - 0.055 | ||||
| b | 0.350 - 0.450 | 0.014 - 0.018 | ||||
| e | 1.270 TYP. | 0.050 TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | ||||
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | ||||
| H | 0.574 - 0.726 | 0.023 - 0.029 | ||||
| 10 - 12 | 10 - 12 | |||||
2504101957_Siliup-SP30P06DNK_C41355080.pdf
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