30V Dual P Channel MOSFET Siliup SP30P06DNK with Halogen Free ROHS Compliance and PDFN5X6 8L Package

Key Attributes
Model Number: SP30P06DNK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
6.5mΩ@10V;10.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
335pF
Number:
2 P-Channel
Output Capacitance(Coss):
387pF
Pd - Power Dissipation:
40W
Input Capacitance(Ciss):
3.456nF
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
SP30P06DNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP30P06DNK is a 30V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% single pulse avalanche energy tested and is suitable for applications such as DC-DC converters and motor control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP30P06DNK
  • Package: PDFN5X6-8L
  • Certifications: ROHS Compliant & Halogen-Free

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -30 V
RDS(on) @-10V 6.5 8 m
RDS(on) @-4.5V 10.5 15 m
ID -50 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID -50 A
Continuous Drain Current (Tc=100C) ID -33 A
Pulse Drain Current Tested IDM -200 A
Single pulsed avalanche energy EAS 125 mJ
Power Dissipation (Tc=25C) PD 40 W
Thermal Resistance Junction-to-Case RJC 3.1 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -30 V
Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =-10V, ID =-15A 6.5 8 m
Static Drain-Source On-Resistance RDS(ON) VGS =-4.5V, ID =-10A 10.5 15 m
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz 3456 pF
Output Capacitance Coss 387 pF
Reverse Transfer Capacitance Crss 335 pF
Total Gate Charge Qg VDS=-15V , VGS=-10V , ID=-20A 62 nC
Gate-Source Charge Qgs 12 nC
Gate-Drain Charge Qgd 14 nC
Turn-On Delay Time Td(on) VDD=-15V ,VGS=-10V , RG=3, ID=-20A 15 nS
Rise Time Tr 61 nS
Turn-Off Delay Time Td(off) 54 nS
Fall Time Tf 65 nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 1.2 V
Maximum Body-Diode Continuous Current IS -50 A
Reverse recover time Trr IS=-20A, di/dt=100A/us, TJ=25 25 nS
Reverse recovery charge Qrr 12 nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 - 1.000 0.035 - 0.039
A3 0.254 REF. 0.010 REF.
D 4.944 - 5.096 0.195 - 0.201
E 5.974 - 6.126 0.235 - 0.241
D1 1.470 - 1.870 0.058 - 0.074
D2 0.470 - 0.870 0.019 - 0.034
E1 3.375 - 3.575 0.133 - 0.141
D3 4.824 - 4.976 0.190 - 0.196
E2 5.674 - 5.826 0.223 - 0.229
k 1.190 - 1.390 0.047 - 0.055
b 0.350 - 0.450 0.014 - 0.018
e 1.270 TYP. 0.050 TYP.
L 0.559 - 0.711 0.022 - 0.028
L1 0.424 - 0.576 0.017 - 0.023
H 0.574 - 0.726 0.023 - 0.029
10 - 12 10 - 12

2504101957_Siliup-SP30P06DNK_C41355080.pdf

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