SOT 23 P Channel MOSFET 16V Siliup SP2305T2 Suitable for Battery Switch and DC DC Converter Circuits
Key Attributes
Model Number:
SP2305T2
Product Custom Attributes
Drain To Source Voltage:
16V
Configuration:
-
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
33mΩ@4.5V;43mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
1 P-Channel
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
1.1W
Input Capacitance(Ciss):
740pF
Gate Charge(Qg):
4.5nC@2.5V
Mfr. Part #:
SP2305T2
Package:
SOT-23
Product Description
SP2305T2 16V P-Channel MOSFET
The SP2305T2 is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capability. Its surface mount package makes it suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP2305T2
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | -16 | V | |
| RDS(on) Typ. | @-4.5V | 33 | m | |
| RDS(on) Typ. | @-2.5V | 43 | m | |
| Continuous Drain Current | ID | -4.1 | A | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||
| Drain-Source Voltage | VDSS | -16 | V | |
| Gate-Source Voltage | VGSS | 10 | V | |
| Continuous Drain Current | ID | -4.1 | A | |
| Pulse Drain Current | IDM | Tested | -16.4 | A |
| Power Dissipation | PD | 1.1 | W | |
| Thermal Resistance Junction-to-Ambient | RJA | 113 | C/W | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||
| Static Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -16 | V |
| Drain-Source Leakage Current | IDSS | VDS=-13V , VGS=0V | - | uA |
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | - | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 to -0.9 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-3.5A | 33 to 45 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-3A | 43 to 60 | m |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VDS=-4V , VGS=0V , f=1MHz | 740 | pF |
| Output Capacitance | Coss | 290 | pF | |
| Reverse Transfer Capacitance | Crss | 190 | pF | |
| Total Gate Charge | Qg | VDS=-4V , VGS=-2.5V , ID=-4.1A | 4.5 | nC |
| Gate-Source Charge | Qgs | 1.2 | nC | |
| Gate-Drain Charge | Qgd | 1.6 | nC | |
| Switching Characteristics | ||||
| Turn-On Delay Time | td(on) | VDD=-4V VGS=-4.5V , RG=1 , ID=-3.3A | 13 | nS |
| Turn-On Rise Time | tr | 35 | nS | |
| Turn-Off Delay Time | td(off) | 32 | nS | |
| Turn-Off Fall Time | tf | 10 | nS | |
| Source-Drain Diode Characteristics | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
Package Information (SOT-23)
| Symbol | Dimensions (mm) |
|---|---|
| A | 0.90 - 1.15 |
| A1 | 0.00 - 0.10 |
| A2 | 0.90 - 1.05 |
| b | 0.30 - 0.50 |
| c | 0.08 - 0.15 |
| D | 2.80 - 3.00 |
| E | 1.20 - 1.40 |
| E1 | 2.25 - 2.55 |
| e | 0.95 REF. |
| e1 | 1.80 - 2.00 |
| L | 0.55 REF. |
| L1 | 0.30 - 0.50 |
| 0 - 8 |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP2305T2 | SOT-23 | 3000 |
2504101957_Siliup-SP2305T2_C41354956.pdf
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