40V N Channel MOSFET Siliup SP40N02GTH with Fast Switching and Single Pulse Avalanche Energy Testing
Key Attributes
Model Number:
SP40N02GTH
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 N-channel
Output Capacitance(Coss):
1.88nF
Input Capacitance(Ciss):
3.2nF
Pd - Power Dissipation:
110W
Gate Charge(Qg):
54nC@10V
Mfr. Part #:
SP40N02GTH
Package:
TO-252
Product Description
Product Overview
The SP40N02GTH is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching speeds, low Gate Charge, and low RDS(on). This MOSFET is ideal for applications such as DC-DC converters, motor control, and portable equipment. It features 100% single pulse avalanche energy testing for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N02GTH
- Channel Type: N-Channel
- Technology: Split Gate Trench Technology
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 1.9 | 2.4 | m | |
| RDS(on)TYP | RDS(on) | @4.5V | 2.7 | 3.6 | m | |
| ID | ID | 130 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | ||
| Continuous Drain Current (Tc=25C) | ID | (Tc=25C) | 130 | A | ||
| Continuous Drain Current (Tc=100C) | ID | (Tc=100C) | 87 | A | ||
| Pulse Drain Current Tested | IDM | 520 | A | |||
| Single pulsed avalanche energy | EAS | 529 | mJ | |||
| Power Dissipation (Tc=25C) | PD | (Tc=25C) | 110 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.14 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =30A | - | 1.9 | 2.4 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =20A | - | 2.7 | 3.6 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 3200 | - | pF |
| Output Capacitance | Coss | - | 1880 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 65 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=30A | - | 54 | - | nC |
| Gate-Source Charge | Qgs | - | 9.5 | - | ||
| Gate-Drain Charge | Qg d | - | 11 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20 VGS=10V , RG=1.6, ID=65A | - | 9.5 | - | nS |
| Rise Time | Tr | - | 3 | - | ||
| Turn-Off Delay Time | Td(off) | - | 33 | - | ||
| Fall Time | Tf | - | 4 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 130 | A | |
| Reverse recover time | Trr | IS=55A, di/dt=100A/us, Tj=25 | - | 58 | - | nS |
| Reverse recovery charge | Qrr | - | 52 | - | nC | |
| Package Information (TO-252) | ||||||
| Symbol | Dimensions (mm) | Dimensions (inches) | Min. | Max. | Min. | Max. |
| A | 2.200 - 2.400 | 0.087 - 0.094 | ||||
| A1 | 0.000 - 0.127 | 0.000 - 0.005 | ||||
| b | 0.660 - 0.860 | 0.026 - 0.034 | ||||
| c | 0.460 - 0.580 | 0.018 - 0.023 | ||||
| D | 6.500 - 6.700 | 0.256 - 0.264 | ||||
| D1 | 5.100 - 5.460 | 0.201 - 0.215 | ||||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 - 6.200 | 0.236 - 0.244 | ||||
| e | 2.186 - 2.386 | 0.086 - 0.094 | ||||
| L | 9.800 - 10.400 | 0.386 - 0.409 | ||||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 - 1.700 | 0.055 - 0.067 | ||||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 - 1.000 | 0.024 - 0.039 | ||||
| 1.100 - 1.300 | 0.043 - 0.051 | |||||
| 0 - 8 | 0 - 8 | |||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| V | 5.350 REF. | 0.211 REF. | ||||
2504101957_Siliup-SP40N02GTH_C22385376.pdf
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