Low Gate Charge 650V MOSFET Siliup SP30HF65TO Ideal for High Frequency and PWM Circuit Applications
Key Attributes
Model Number:
SP30HF65TO
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
30A
RDS(on):
85mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
4.1pF
Number:
1 N-channel
Output Capacitance(Coss):
136pF
Input Capacitance(Ciss):
2.618nF
Pd - Power Dissipation:
193W
Gate Charge(Qg):
54nC@10V
Mfr. Part #:
SP30HF65TO
Package:
TOLL
Product Description
Product Overview
The SP30HF65TO is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency applications, it features fast switching speeds, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard-switched, and high-frequency circuits, as well as power management systems. The device comes in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30HF65TO
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | ±30 | V | |||
| Continuous Drain Current (Tc=25) | ID | 30 | A | |||
| Continuous Drain Current (Tc=100) | ID | 20 | A | |||
| Pulsed Drain Current | IDM | 120 | A | |||
| Single Pulse Avalanche Energy | EAS | 362 | mJ | |||
| Power Dissipation (Tc=25) | PD | 193 | W | |||
| Thermal Resistance Junction-to-Case | RθJC | 0.65 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250µA | 650 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS = 520V, VGS = 0V | - | - | 1 | µA |
| Gate-Source Leakage Current | IGSS | VGS = ±30V, VDS = 0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2.5 | 3.5 | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 85 | 100 | mΩ |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=00kHz | - | 2618 | - | pF |
| Output Capacitance | Coss | - | 136 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 4.1 | - | pF | |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=400V , VGS=10V , ID=40A | - | 54 | - | nC |
| Gate-Source Charge | Qgs | - | 19 | - | nC | |
| Gate-Drain Charge | Qgd | - | 21 | - | nC | |
| Turn-On Delay Time | Td(on) | VGS = 10V, VDS = 400V, ID=40A , RG = 2Ω | - | 35 | - | nS |
| Rise Time | Tr | - | 152 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 63 | - | nS | |
| Fall Time | Tf | - | 48 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 30 | A | |
| Reverse Recovery Time | trr | IS=40A,di/dt=100A/us, Tj=25 | - | 148 | - | nS |
| Reverse Recovery Charge | Qrr | - | 1.2 | - | µC | |
2506271720_Siliup-SP30HF65TO_C49257231.pdf
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