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quality Siliup SP2002KDTW D2 20V N Channel MOSFET for Logic Level Shifting and Power Switching Applications factory
quality Siliup SP2002KDTW D2 20V N Channel MOSFET for Logic Level Shifting and Power Switching Applications factory

Siliup SP2002KDTW D2 20V N Channel MOSFET for Logic Level Shifting and Power Switching Applications

Key Attributes
Model Number: SP2002KDTW-D2
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
RDS(on):
800mΩ@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
120pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
SP2002KDTW-D2
Package:
SOT-363
Product Description

Product Overview

The SP2002KDTW-D2 is a 20V N-Channel MOSFET designed for surface mount applications. It features low RDS(on) and operates at low logic level gate drive, making it suitable for load/power switching, interfacing, battery management for ultra-small portable electronics, and logic level shifting. This ESD-protected device offers efficient switching performance.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 6303
  • Package Type: SOT-363
  • Channel Type: N-Channel

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current ID 0.75 A
Pulsed Drain Current IDM 0.18 A
Power Dissipation PD 0.2 W
Thermal Resistance from Junction to Ambient RJA 833 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 ~ +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 20 V
Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA
Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±10 µA
Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 0.3 0.65 1 V
Drain-source on-resistance RDS(on) VGS = 4.5V, ID = 0.5A 0.25 0.38 Ω
VGS =2.5V, ID = 0.5A 0.35 0.45 Ω
VGS =1.8V, ID = 0.5A 0.4 0.8 Ω
VGS =1.5V, ID = 0.5A 0.5 Ω
VGS =1.2V, ID = 0.5A 1 Ω
Dynamic Characteristics
Input Capacitance Ciss VDS =16V,VGS =0V, f=1MHz 79 120 pF
Output Capacitance Coss 13 20 pF
Reverse Transfer Capacitance Crss 9 15 pF
Switching Characteristics
Turn-on delay time td(on) VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω 6.7 ns
Turn-on rise time tr 4.8 ns
Turn-off delay time td(off) 17.3 ns
Turn-off fall time tf 7.4 ns
Source-Drain Diode Characteristics
Body Diode Voltage VSD IS=0.5A, VGS = 0V 0.7 1.3 V
Package Information (SOT-363)
Symbol Dimensions In Millimeters Min. Max.
A 0.90 1.00
A1 0.00 0.10
B 0.10 0.30
b1 1.30
D 1.80 2.20
E 2.00 2.20
E1 1.15 1.35
e (TYP.) 0.65
L 0.10 0.25
L1 0.15 0.40

2411212332_Siliup-SP2002KDTW-D2_C41355128.pdf

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