power switching solution Siliup SP40P12P8 40V P Channel MOSFET with low gate charge and fast switching
Key Attributes
Model Number:
SP40P12P8
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
13A
RDS(on):
15mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
270pF
Number:
1 P-Channel
Output Capacitance(Coss):
280pF
Input Capacitance(Ciss):
4nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
47nC@4.5V
Mfr. Part #:
SP40P12P8
Package:
SOP-8L
Product Description
Product Overview
The SP40P12P8 is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40P12
- Package: SOP-8L
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -40 | V | ||||
| RDS(on)TYP | @-10V | 12 | 15 | m | ||
| ID | @-4.5V | 15 | m | |||
| ID | -13 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -13 | A | |||
| Pulsed Drain Current | IDM | -52 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 48 | mJ | |||
| Power Dissipation | PD | 2.5 | W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 50 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-10A | - | 12 | 15 | m |
| VGS=-4.5V , ID=-8A | - | 15 | 20 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | - | 2830 | - | pF |
| Output Capacitance | Coss | - | 268 | - | ||
| Reverse Transfer Capacitance | Crss | - | 204 | - | ||
| Total Gate Charge | Qg | VDS=-20V , VGS=-4.5V , ID=-10A | - | 31 | - | nC |
| Gate-Source Charge | Qgs | - | 9.8 | - | ||
| Gate-Drain Charge | Qgd | - | 10 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-20V VGS=-10V , RG=1, ID=-10A | - | 35 | - | nS |
| Rise Time | Tr | - | 31 | - | ||
| Turn-Off Delay Time | Td(off) | - | 87 | - | ||
| Fall Time | Tf | - | 10 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -13 | A | |
| Reverse recover time | Trr | IS=-10A, di/dt=100A/us, TJ=25 | - | 37 | - | nS |
| Reverse recovery charge | Qrr | - | 42 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | (REF.) | 1.27 | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| () | 0 | 8 | ||||
Note: 1. The EAS test condition is VDD=-20V, VG=-10V, L=0.1mH, Rg=25.
2504101957_Siliup-SP40P12P8_C41355196.pdf
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