P Channel MOSFET Siliup SP2101BT3 with 80 Milliohm On Resistance and 1.3A Continuous Current Capacity
Key Attributes
Model Number:
SP2101BT3
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.3A
RDS(on):
80mΩ@4.5V;95mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
78pF
Number:
1 P-Channel
Output Capacitance(Coss):
136pF
Input Capacitance(Ciss):
545pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
3.5nC@2.5V
Mfr. Part #:
SP2101BT3
Package:
SOT-323
Product Description
Product Overview
The SP2101BT3 is a 20V P-Channel MOSFET designed for high power and current handling capabilities. It is suitable for surface mount applications and is ideal for use in battery switches and DC/DC converters. This device offers robust performance with key electrical characteristics including a typical Drain-Source On-Resistance (RDS(on)) of 80m at -4.5V and 95m at -2.5V, and a continuous drain current (ID) of -1.3A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: SOT-323
- Marking Code: TS1
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | -4.5V | 80 | 110 | m | |
| Static Drain-Source On-Resistance | RDS(on) | -2.5V | 95 | 140 | m | |
| Continuous Drain Current | ID | -1.3 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -1.3 | A | |||
| Pulse Drain Current | IDM | -5.2 | A | |||
| Power Dissipation | PD | 320 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 390 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.5 | -0.7 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-500mA | 80 | 110 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-500mA | 95 | 140 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-8V , VGS=0V , f=1MHz | 545 | pF | ||
| Output Capacitance | Coss | 136 | ||||
| Reverse Transfer Capacitance | Crss | 78 | ||||
| Total Gate Charge | Qg | VDS=-10V , VGS=-2.5V , ID=-3A | 3.5 | nC | ||
| Gate-Source Charge | Qgs | 0.8 | ||||
| Gate-Drain Charge | Qg d | 1.5 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-4V VGS=-4.5V , RG=6.2 , ID=-1A | 6.6 | nS | ||
| Turn-On Rise Time | tr | 18 | ||||
| Turn-Off Delay Time | td(off) | 24 | ||||
| Turn-Off Fall Time | tf | 16 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-323) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||||
| Min. | Max. | Min. | Max. | |||
| A | 0.900 | 1.100 | 0.035 | 0.043 | ||
| A1 | 0.000 | 0.100 | 0.000 | 0.004 | ||
| A2 | 0.900 | 1.000 | 0.035 | 0.039 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| c | 0.080 | 0.150 | 0.003 | 0.006 | ||
| D | 2.000 | 2.200 | 0.079 | 0.087 | ||
| E | 1.150 | 1.350 | 0.045 | 0.053 | ||
| E1 | 2.150 | 2.450 | 0.085 | 0.096 | ||
| e | 0.650 TYP. | 0.026 TYP. | ||||
| e1 | 1.200 | 1.400 | 0.047 | 0.055 | ||
| L | 0.525 REF. | 0.021 REF. | ||||
| L1 | 0.260 | 0.460 | 0.010 | 0.018 | ||
| 0 | 8 | 0 | 8 | |||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP2101BT3 | SOT-323 | 3000 | ||||
2504101957_Siliup-SP2101BT3_C41355151.pdf
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