Complementary MOSFET transistor Siliup SP6038CP8 60V with high current handling and low on resistance
Key Attributes
Model Number:
SP6038CP8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A;3.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@10V;80mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA;1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
46pF;38pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.165nF;960pF
Output Capacitance(Coss):
53pF;87pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
22nC@10V;15.7nC@10V
Mfr. Part #:
SP6038CP8
Package:
SOP-8
Product Description
Product Overview
The SP6038CP8 is a 60V Complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead-free, surface mount SOP-8L package and has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP6038CP8
- Package Type: SOP-8L
- Certifications: Lead-free product acquired
- Device Code: 6038
Technical Specifications
| Parameter | Symbol | N-Channel | P-Channel | Units | ||
| Conditions | Typ. | Conditions | Typ. | |||
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60V | -60V | V | ||
| On-Resistance | RDS(on) | @10V, 4.5A | 35m | @-10V, -3.5A | 80m | m |
| On-Resistance | RDS(on) | @4.5V, 4A | 45m | @-4.5V, -2.5A | 95m | m |
| Continuous Drain Current | ID | - | 5A | - | -3.5A | A |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | N-Channel | 60 | P-Channel | -60 | V |
| Gate-Source Voltage | VGS | N-Channel | 20 | P-Channel | 20 | V |
| Continuous Drain Current | ID | N-Channel | 5 | P-Channel | -3.5 | A |
| Pulsed Drain Current | IDM | N-Channel | 20 | P-Channel | -14 | A |
| Single Pulse Avalanche Energy | EAS | N-Channel | 18 | P-Channel | 30 | mJ |
| Power Dissipation | PD | 2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | /W | |||
| Storage Temperature Range | TSTG | -55 to 150 | ||||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||||
| N-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V, VGS=0V, TJ=25 | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.0 | 2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=4.5A | 35 | 50 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=4A | 45 | 65 | m | |
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1MHz | - | 1165 | pF | |
| Output Capacitance | Coss | - | 53 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 46 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=5A | - | 22 | nC | |
| Gate-Source Charge | Qgs | - | 2.5 | - | nC | |
| Gate-Drain Charge | Qg | - | 3.4 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=30V, VGS=10V, RG=3, ID=10A | - | 4.4 | nS | |
| Rise Time | Tr | - | 3.4 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 16 | - | nS | |
| Fall Time | Tf | - | 2 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | - | 5 | - | A | |
| Reverse Recovery Time | Trr | IS=5A, di/dt=100A/us, TJ=25 | - | 23 | nS | |
| Reverse Recovery Charge | Qrr | - | 9 | - | nC | |
| P-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | - | -60 | V | |
| Drain-Source Leakage Current | IDSS | VDS=-48V, VGS=0V, TJ=25 | - | -1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =-250uA | -1.0 | -2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-3.5A | - | 80 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-2.5A | - | 95 | m | |
| Input Capacitance | Ciss | VDS=-30V, VGS=0V, f=1MHz | - | 960 | pF | |
| Output Capacitance | Coss | - | 87 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 38 | - | pF | |
| Total Gate Charge | Qg | VDS=-30V, VGS=-10V, ID=-4A | - | 15.7 | nC | |
| Gate-Source Charge | Qgs | - | 3 | - | nC | |
| Gate-Drain Charge | Qg | - | 3.5 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=-30V, VGS=-10V, RG=3, ID=-5A | - | 9 | nS | |
| Rise Time | Tr | - | 11 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 25 | - | nS | |
| Fall Time | Tf | - | 12 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A, TJ=25 | - | -1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | - | -3.5 | - | A | |
| Reverse Recovery Time | Trr | IS=-3A, di/dt=-100A/us, Tj=25 | - | 26.5 | nS | |
| Reverse Recovery Charge | Qrr | - | 31 | - | nC | |
| SOP-8L Package Information | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | REF. | ||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP6038CP8_C22385405.pdf
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