Power Switching MOSFET 80V N Channel Siliup SP80N03AHTQ with Low Gate Charge and High Current Rating
Key Attributes
Model Number:
SP80N03AHTQ
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
200A
RDS(on):
2.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
386pF
Number:
1 N-channel
Output Capacitance(Coss):
722pF
Pd - Power Dissipation:
300W
Input Capacitance(Ciss):
7.61nF
Gate Charge(Qg):
183nC@10V
Mfr. Part #:
SP80N03AHTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP80N03AHTQ is an 80V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it ideal for power switching applications, DC-DC converters, and power management systems. This device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP80N03AHTQ
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 80 | V | ||||
| RDS(on) TYP | @10V | 2.9 | m | |||
| ID | 200 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 80 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 200 | A | |||
| Continuous Drain Current (Tc=100) | ID | 133 | A | |||
| Pulsed Drain Current | IDM | 800 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 1161 | mJ | |||
| Power Dissipation (Tc=25) | PD | 300 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.42 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 80 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=64V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=75A | - | 2.9 | 4.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 7610 | - | pF |
| Output Capacitance | Coss | - | 722 | - | ||
| Reverse Transfer Capacitance | Crss | - | 386 | - | ||
| Total Gate Charge | Qg | VDS=60V , VGS=10V , ID=75A | - | 183 | - | nC |
| Gate-Source Charge | Qgs | - | 44 | - | ||
| Gate-Drain Charge | Qgd | - | 65 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=48V,VGS=10V,RG=6,ID=75A | - | 29 | - | nS |
| Rise Time | tr | - | 120 | - | ||
| Turn-Off Delay Time | td(off) | - | 68 | - | ||
| Fall Time | tf | - | 74 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS =1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 200 | A | |
| Reverse Recovery Time | trr | IS=20A, di/dt=100A/us, TJ=25 | - | 55 | - | nS |
| Reverse Recovery Charge | Qrr | - | 112 | - | nC | |
| Package Information (TO-220-3L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.400 | 4.600 | 0.173 | 0.181 | ||
| A1 | 2.250 | 2.550 | 0.089 | 0.100 | ||
| b | 0.710 | 0.910 | 0.028 | 0.036 | ||
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| c | 0.330 | 0.650 | 0.013 | 0.026 | ||
| c1 | 1.200 | 1.400 | 0.047 | 0.055 | ||
| D | 9.910 | 10.250 | 0.390 | 0.404 | ||
| E | 8.950 | 9.750 | 0.352 | 0.384 | ||
| E1 | 12.650 | 13.050 | 0.498 | 0.514 | ||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 | ||
| F | 2.650 | 2.950 | 0.104 | 0.116 | ||
| H | 7.900 | 8.100 | 0.311 | 0.319 | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
| L | 12.900 | 13.400 | 0.508 | 0.528 | ||
| L1 | 2.850 | 3.250 | 0.112 | 0.128 | ||
| V | 6.900 REF. | 0.276 REF. | ||||
| 3.400 | 3.800 | 0.134 | 0.150 | |||
Note: 1. The test condition is VDD=45V, VGS=10V, L=0.3mH, RG=25
2504101957_Siliup-SP80N03AHTQ_C41354985.pdf
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