86--136 6733 2386
quality Siliup SP2301BT2 P Channel MOSFET 20V 2A Continuous Drain Current for DC DC Converter and Battery Switch factory
quality Siliup SP2301BT2 P Channel MOSFET 20V 2A Continuous Drain Current for DC DC Converter and Battery Switch factory

Siliup SP2301BT2 P Channel MOSFET 20V 2A Continuous Drain Current for DC DC Converter and Battery Switch

Key Attributes
Model Number: SP2301BT2
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
95mΩ@4.5V;120mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Output Capacitance(Coss):
62pF
Pd - Power Dissipation:
400mW
Input Capacitance(Ciss):
327pF
Gate Charge(Qg):
6.5nC@2.5V
Mfr. Part #:
SP2301BT2
Package:
SOT-23
Product Description

Product Overview

The SP2301BT2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capability. It is suitable for surface mount applications and is commonly used in battery switches and DC/DC converters. The device offers a continuous drain current of -2A and features a low static drain-source on-resistance.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP2301BT2
  • Package: SOT-23
  • Device Code: 2301B

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
On-Resistance RDS(on) @ -4.5V 95 120 m
On-Resistance RDS(on) @ -2.5V 120 150 m
Continuous Drain Current ID -2 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 10 V
Continuous Drain Current ID -2 A
Pulse Drain Current IDM Tested -8 A
Power Dissipation PD 400 mW
Thermal Resistance Junction-to-Ambient RJA 312.5 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -20 V
Drain-Source Leakage Current IDSS VDS=-16V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -0.4 -0.75 -0.9 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-1.5A 95 120 m
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V, ID=-1.0A 120 150 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-10V , VGS=0V , f=1MHz 485 pF
Output Capacitance Coss 58 pF
Reverse Transfer Capacitance Crss 49 pF
Total Gate Charge Qg VDS=-10V , VGS=-2.5V , ID=-2A 6.5 nC
Gate-Source Charge Qgs 0.28
Gate-Drain Charge Qg 0.6
Switching Characteristics
Turn-On Delay Time td(on) VDD=-10V VGS=-4.5V , RG=6 , ID=-2A 7 nS
Turn-On Rise Time tr 6
Turn-Off Delay Time td(off) 42
Turn-Off Fall Time tf 6.5
Source-Drain Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Package Information (SOT-23)
Symbol Dimensions In Millimeters Min. Max.
A 0.90 1.15
A1 0.00 0.10
A2 0.90 1.05
b 0.30 0.50
c 0.08 0.15
D 2.80 3.00
E 1.20 1.40
E1 2.25 2.55
e 0.95 REF.
e1 1.80 REF. 2.00
L 0.55 REF.
L1 0.30 0.50
0 8

2504101957_Siliup-SP2301BT2_C41354958.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion factory
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
quality High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers factory
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
quality Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current factory
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
quality Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device factory
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.