power switching solution with low Rdson and fast switching speeds Siliup SP30P03P8 30V P Channel MOSFET device

Key Attributes
Model Number: SP30P03P8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
25A
RDS(on):
3.5mΩ@10V;5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
515pF
Number:
1 P-Channel
Output Capacitance(Coss):
823pF
Pd - Power Dissipation:
3.5W
Input Capacitance(Ciss):
7.034nF
Gate Charge(Qg):
131nC@10V
Mfr. Part #:
SP30P03P8
Package:
SOP-8
Product Description

Product Overview

The SP30P03P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching speeds, low gate charge, and low Rdson. This device is suitable for hard-switched and high-frequency circuits, including uninterruptible power supplies. It has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP30P03P8
  • Package: SOP-8L
  • Device Code: 30P03

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
Drain-Source Voltage V(BR)DSS -30 V
RDS(on)TYP RDS(on)TYP @-4.5V 3.5 m
RDS(on)TYP RDS(on)TYP @-2.5V 5 m
Continuous Drain Current ID -25 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) -30 V
Gate-Source Voltage VGS (Ta=25) 20 V
Continuous Drain Current ID (Ta=25) -25 A
Pulsed Drain Current IDM (Ta=25) -100 A
Single pulsed avalanche energy EAS (Ta=25) 225 mJ
Power Dissipation PD (Ta=25) 3.5 W
Thermal Resistance Junction-to-Ambient RJA (Ta=25) 35.7 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -30 - V
Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V - - -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.6 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-20A - 3.5 4.4 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-15A - 5 6.5 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz - 5700 - pF
Output Capacitance Coss VDS=-15V , VGS=0V , f=1MHz - 859 - pF
Reverse Transfer Capacitance Crss VDS=-15V , VGS=0V , f=1MHz - 650 - pF
Total Gate Charge Qg VDS=-15V , VGS=-10V , ID=-20A - 120 - nC
Gate-Source Charge Qgs VDS=-15V , VGS=-10V , ID=-20A - 23 - nC
Gate-Drain Charge Qg d VDS=-15V , VGS=-10V , ID=-20A - 17 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-15V,VGS=-10V,RG=3,ID=-20A - 27 - nS
Rise Time Tr VDD=-15V,VGS=-10V,RG=3,ID=-20A - 83 - nS
Turn-Off Delay Time Td(off) VDD=-15V,VGS=-10V,RG=3,ID=-20A - 76 - nS
Fall Time Tf VDD=-15V,VGS=-10V,RG=3,ID=-20A - 65 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A - - -1.2 V
Maximum Body-Diode Continuous Current IS - - -25 A
Reverse Recovery Time Trr IS=-20A, di/dt=100A/us, Tj=25 - 48 - nS
Reverse Recovery Charge Qrr IS=-20A, di/dt=100A/us, Tj=25 - 32 - nC
Package Information (SOP-8L)
Symbol Dimensions (mm) Min. Max.
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e 1.27 REF.
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
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2504101957_Siliup-SP30P03P8_C41355007.pdf

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