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quality Surface Mount Dual NPN Small Signal Transistor Slkor MMDT3904 Suitable for Amplification Applications factory
quality Surface Mount Dual NPN Small Signal Transistor Slkor MMDT3904 Suitable for Amplification Applications factory

Surface Mount Dual NPN Small Signal Transistor Slkor MMDT3904 Suitable for Amplification Applications

Key Attributes
Model Number: MMDT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
DC Current Gain:
100@10mA,1V
Transition Frequency(fT):
300MHz
Number:
2 NPN
Vce Saturation(VCE(sat)):
300mV
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMDT3904
Package:
SOT-363
Product Description

Product Overview

The MMDT3904 is a dual NPN small signal surface mount transistor designed for low power amplification and switching applications. It features an epitaxial planar die construction and is available in an ultra-small SOT-363 surface mount package. This transistor is ideal for general switching and amplification tasks.

Product Attributes

  • Type: Dual NPN Small Signal Surface Mount Transistor
  • Package: SOT-363
  • Availability: Also available in lead-free version

Technical Specifications

Symbol Parameter Conditions Min. Max. Unit
MAXIMUM RATING @ Ta=25
VCBO Collector-base voltage 60 V
VCEO Collector-emitter voltage 40 V
VEBO Emitter-base voltage 6 V
IC Collector current -continuous 0.2 A
Ptot Total power dissipation 0.2 W
RJA Thermal Resistance, Junction to Ambient 625 /W
Tstg Storage temperature -55 +150 C
Tj Junction temperature -55 +150 C
ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified
V(BR)CBO Collector-base breakdown voltage IC=10A,IE=0 60 V
V(BR)CEO Collector-emitter breakdown voltage IC=1mA,IB=0 40 V
V(BR)EBO Emitter-base breakdown voltage IE=10A,IC=0 5 V
ICEX Collector cut-off current VCE=30V,VEB(OFF)=3.0V - 50 nA
IBL Base cut-off current VCE=30V,VEB(OFF)=3.0V - 50 nA
hFE DC current gain VCE =1V,IC= 0.1mA 40 300 -
VCE =1V,IC =1mA 70 - -
VCE =1V,IC =10mA 100 - -
VCE =1V,IC =50mA 60 - -
VCE =1V,IC =100mA 30 - -
VCE(sat) Collector-emitter saturation voltage IC =10mA,IB =1mA - 200 mV
VCE(sat) Collector-emitter saturation voltage IC =50mA,IB =5mA - 300 mV
VBE(sat) Base-emitter saturation voltage IC =10mA,IB =1mA 650 850 mV
VBE(sat) Base-emitter saturation voltage IC =50mA, IB =5mA - 950 mV
Cobo Output capacitance IE =0, VCB =5V, f =1MHz - 4 pF
Cibo Input capacitance IC=0, VEB =0.5V, f =1MHz - 8 pF
fT Transition frequency IC=10mA,VCE=20V,f=100MHz 300 - MHz
NF Noise figure IC=0.1mA,VCE =5V,RS=1k, f = 1kHz - 5 dB
td Delay time VCC=3V,VBE(off)=-0.5V IC=10mA IB1=1mA - 35 ns
tr Rise time VCC=3V,VBE(off)=-0.5V IC=10mA IB1=1mA - 35 ns
ts Storage time VCC=3V,IC=10mA IB1=IB2=1mA - 200 ns
tf Fall time VCC=3V,IC=10mA IB1=IB2=1mA - 50 ns
PACKAGE INFORMATION
Package Type Dimensions (mm) Min Max Typical
SOT-363 A 2.00 2.20
B 1.15 1.35
C 0.95
D 0.25
E 0.25 0.40
G 0.60 0.70
H 0.02 0.10
J 0.10
K 2.2 2.4
0.50 0.40 1.90
0.65 0.65
Device Package Shipping
MMDT3904 SOT-363 3000/Tape&Reel

2201121730_Slkor-MMDT3904_C2936028.pdf

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