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quality 100V N Channel MOSFET Siliup SP010N08GTD with Fast Switching Low Rdson and Avalanche Energy Tested factory
quality 100V N Channel MOSFET Siliup SP010N08GTD with Fast Switching Low Rdson and Avalanche Energy Tested factory

100V N Channel MOSFET Siliup SP010N08GTD with Fast Switching Low Rdson and Avalanche Energy Tested

Key Attributes
Model Number: SP010N08GTD
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
65A
RDS(on):
8.5mΩ@10V;11mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.9V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 N-channel
Output Capacitance(Coss):
339pF
Input Capacitance(Ciss):
1.635nF
Pd - Power Dissipation:
110W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SP010N08GTD
Package:
TO-263-3L
Product Description

Product Overview

The SP010N08GTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This MOSFET is 100% single pulse avalanche energy tested and is suitable for power switching applications, battery management, and uninterruptible power supplies. The device is available in a TO-263 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010N08GTD
  • Technology: Advanced Split Gate Trench Technology
  • Package: TO-263
  • Channel Type: N-Channel
  • Marking: 010N08G

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS 100 V
RDS(on)TYP @10V 8.5 m
RDS(on)TYP @4.5V 11 m
ID 65 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25 unless otherwise noted) 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID (Tc=25) 65 A
Continuous Drain Current ID (Tc=100) 45 A
Pulsed Drain Current IDM 260 A
Single Pulse Avalanche Energy EAS 156 mJ
Power Dissipation PD (Tc=25) 110 W
Thermal Resistance Junction-to-Case RJC 1.14 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 100 - - V
Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1 uA
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.2 1.9 2.5 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 8.5 12 m
Drain-Source ON Resistance RDS(ON) VGS = 4.5V, ID = 15A - 11 15 m
Dynamic Characteristics
Input Capacitance Ciss VDS =50V, VGS = 0V, f = 1.0MHz - 1635 - pF
Output Capacitance Coss - 339 - pF
Reverse Transfer Capacitance Crss - 22 - pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=50A - 14 - nC
Gate-Source Charge Qgs - 5 - nC
Gate-Drain Charge Qg d - 7 - nC
Switching Characteristics
Turn-On Delay Time td(on) VGS = 10V, VDS =50V, ID=50A RG = 4.7 - 8 - nS
Rise Time tr - 16 - nS
Turn-Off Delay Time td(off) - 31 - nS
Fall Time tf - 27 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 65 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 49 - nS
Reverse Recovery Charge Qrr - 78 - nC

Note: EAS test condition is VDD=50V, VGS=10V, L=0.5mH, RG=25.


2504101957_Siliup-SP010N08GTD_C22466797.pdf

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