SP010N02BGHTD 100V N Channel Power MOSFET Featuring Low Gate Charge and Split Gate Trench Technology
Key Attributes
Model Number:
SP010N02BGHTD
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
220A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.1mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Output Capacitance(Coss):
1.876nF
Input Capacitance(Ciss):
10.256nF
Pd - Power Dissipation:
240W
Gate Charge(Qg):
158nC@10V
Mfr. Part #:
SP010N02BGHTD
Package:
TO-263
Product Description
Product Overview
The SP010N02BGHTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is designed for power switching applications, DC-DC converters, and power management systems. The device comes in a TO-263 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N02BGHTD
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
- Package: TO-263
- Marking: 010N02BGH
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 100 | V | |||
| RDS(on) TYP | RDS(on) | @10V | 2.1 | m | ||
| ID | ID | 220 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 220 | A | |||
| Continuous Drain Current (Tc=100) | ID | 150 | A | |||
| Pulsed Drain Current | IDM | 880 | A | |||
| Single Pulse Avalanche Energy | EAS | 1458 | mJ | |||
| Power Dissipation (Tc=25) | PD | 240 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.52 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.7 | 3.2 | 4.3 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - | 2.1 | 2.7 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 10256 | - | pF |
| Output Capacitance | Coss | - | 1876 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 35 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | - | 158 | - | nC |
| Gate-Source Charge | Qgs | - | 51 | - | ||
| Gate-Drain Charge | Qgd | - | 27 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=1.6, ID=125A | - | 35 | - | nS |
| Rise Time | tr | - | 68 | - | ||
| Turn-Off Delay Time | td(off) | - | 150 | - | ||
| Fall Time | tf | - | 105 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 220 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 86 | - | nS |
| Reverse Recovery Charge | Qrr | - | 256 | - | nC | |
| Package Information (TO-263) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.470 | 4.670 | 0.176 | 0.184 | ||
| A1 | 0.000 | 0.150 | 0.000 | 0.006 | ||
| B | 1.120 | 1.420 | 0.044 | 0.056 | ||
| b | 0.710 | 0.910 | 0.028 | 0.036 | ||
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| c | 0.310 | 0.530 | 0.012 | 0.021 | ||
| c1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| D | 10.010 | 10.310 | 0.394 | 0.406 | ||
| E | 8.500 | 8.900 | 0.335 | 0.350 | ||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 | ||
| L | 14.940 | 15.500 | 0.588 | 0.610 | ||
| L1 | 4.950 | 5.450 | 0.195 | 0.215 | ||
| L2 | 2.340 | 2.740 | 0.092 | 0.108 | ||
| L3 | 1.300 | 1.700 | 0.051 | 0.067 | ||
| 0 | 8 | 0 | 8 | |||
| V | 5.600 REF. | 0.220 REF. | ||||
2504101957_Siliup-SP010N02BGHTD_C22385364.pdf
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