650V Super Junction MOSFET Siliup SP18HF65TQ Ideal for PWM Applications and Power Management Systems
Key Attributes
Model Number:
SP18HF65TQ
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Pd - Power Dissipation:
142W
Input Capacitance(Ciss):
1.064nF
Output Capacitance(Coss):
81pF
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
SP18HF65TQ
Package:
TO-220-3L
Product Description
Product Overview
The SP18HF65TQ is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for fast switching and high efficiency, it features low gate charge and low on-resistance (RDS(on)). This MOSFET is suitable for PWM applications, hard-switched, and high-frequency circuits, as well as power management systems. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Super-Junction MOSFET
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current (Tc=25) | ID | 18 | A | |||
| Continuous Drain Current (Tc=100) | ID | 12 | A | |||
| Pulsed Drain Current | IDM | 72 | A | |||
| Single Pulse Avalanche Energy | EAS | 208 | mJ | |||
| Power Dissipation (Tc=25) | PD | 142 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.88 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 650 | V | ||
| Drain-Source Leakage Current | IDSS | VDS = 520V, VGS = 0V | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS = 30V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.5 | 3.5 | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 20A | 150 | 180 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=100kHz | 1064 | pF | ||
| Output Capacitance | Coss | 81 | pF | |||
| Reverse Transfer Capacitance | Crss | 2.5 | pF | |||
| Total Gate Charge | Qg | VDS=400V , VGS=10V , ID=10A | 24 | nC | ||
| Gate-Source Charge | Qgs | 5.3 | ||||
| Gate-Drain Charge | Qgd | 8.5 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=400V, VGS=10V , RG=2, ID=10A | 17 | nS | ||
| Rise Time | Tr | 32 | ||||
| Turn-Off Delay Time | Td(off) | 66 | ||||
| Fall Time | Tf | 27 | ||||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 18 | A | |||
| Reverse recover time | Trr | IS=10A, di/dt=100A/us, Tj=25 | 195 | nS | ||
| Reverse recovery charge | Qrr | 2762 | uC | |||
| Package Information TO-220-3L | ||
|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
| Min. Max. | Min. Max. | |
| A | 4.400 4.600 | 0.173 0.181 |
| A1 | 2.250 2.550 | 0.089 0.100 |
| b | 0.710 0.910 | 0.028 0.036 |
| b1 | 1.170 1.370 | 0.046 0.054 |
| c | 0.330 0.650 | 0.013 0.026 |
| c1 | 1.200 1.400 | 0.047 0.055 |
| D | 9.910 10.250 | 0.390 0.404 |
| E | 8.950 9.750 | 0.352 0.384 |
| E1 | 12.650 13.050 | 0.498 0.514 |
| e | 2.540 TYP. | 0.100 TYP. |
| e1 | 4.980 5.180 | 0.196 0.204 |
| F | 2.650 2.950 | 0.104 0.116 |
| H | 7.900 8.100 | 0.311 0.319 |
| h | 0.000 0.300 | 0.000 0.012 |
| L | 12.900 13.400 | 0.508 0.528 |
| L1 | 2.850 3.250 | 0.112 0.128 |
| V | 6.900 REF. | 0.276 REF. |
| 3.400 3.800 | 0.134 0.150 | |
2506271720_Siliup-SP18HF65TQ_C49257233.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
