900V N Channel Planar MOSFET Siliup SP9N90TF with Low RDSon and Fast Switching Speed in TO247 Package
Key Attributes
Model Number:
SP9N90TF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
9A
RDS(on):
980mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
-
Output Capacitance(Coss):
208pF
Input Capacitance(Ciss):
2.713nF
Pd - Power Dissipation:
250W
Gate Charge(Qg):
58nC@10V
Mfr. Part #:
SP9N90TF
Package:
TO-247
Product Description
Product Overview
The SP9N90TF is a 900V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET features fast switching speeds, low gate charge, and a low RDS(on) of 0.98 at 10V. It is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters and synchronous rectification. The device is supplied in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Technology: N-Channel Planar MOSFET
- Package: TO-247
- Device Code: 9N90
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 900 | V | |||
| RDS(on) | RDS(on) | @10V | 0.98 | |||
| Continuous Drain Current | ID | 9 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 900 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current (Tc=25) | ID | 9 | A | |||
| Continuous Drain Current (Tc=100) | ID | 6 | A | |||
| Pulsed Drain Current | IDM | 36 | A | |||
| Single Pulse Avalanche Energy | EAS | 245 | mJ | |||
| Power Dissipation (Tc=25) | PD | 250 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.5 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 900 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 720V, VGS = 0V | - | - | 25 | A |
| Gate Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 5A | - | 0.98 | 1.25 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 2713 | - | pF |
| Output Capacitance | Coss | - | 208 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 11 | - | pF | |
| Total Gate Charge | Qg | VDS=720V , VGS=10V , ID=10A | - | 58 | - | nC |
| Gate-Source Charge | Qgs | - | 11 | - | ||
| Gate-Drain Charge | Qg | - | 23 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 450V, VDS = 25V, ID = 4A RG = 2.5 | - | 30 | - | nS |
| Rise Time | tr | - | 41 | - | ||
| Turn-Off Delay Time | td(off) | - | 80 | - | ||
| Fall Time | tf | - | 51 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 9 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=9A, di/dt=100A/us, TJ=25 | - | 850 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 8050 | - | nC | |
| Package Information (TO-247) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.850 - 5.150 | 0.191 - 0.200 | ||||
| A1 | 2.200 - 2.600 | 0.087 - 0.102 | ||||
| b2 | 1.800 - 2.200 | 0.071 - 0.087 | ||||
| b | 1.000 - 1.400 | 0.039 - 0.055 | ||||
| b1 | 2.800 - 3.200 | 0.110 - 0.126 | ||||
| c | 0.500 - 0.700 | 0.020 - 0.028 | ||||
| c1 | 1.900 - 2.100 | 0.075 - 0.083 | ||||
| D | 15.450 - 15.750 | 0.608 - 0.620 | ||||
| E1 | 3.500 REF. | 0.138 REF. | ||||
| E2 | 3.600 REF. | 0.142 REF. | ||||
| L | 40.900 - 41.300 | 1.610 - 1.626 | ||||
| L1 | 24.800 - 25.100 | 0.976 - 0.988 | ||||
| L2 | 20.300 - 20.600 | 0.799 - 0.811 | ||||
| 7.100 - 7.300 | 0.280 - 0.287 | |||||
| e | 5.450 TYP. | 0.215 TYP. | ||||
| H1 | 5.980 REF. | 0.235 REF. | ||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
2504101957_Siliup-SP9N90TF_C42372395.pdf
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