High Current 60V N Channel MOSFET Siliup SP60N01BGTQ Suitable for Power Switching and Battery Systems
Key Attributes
Model Number:
SP60N01BGTQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.5mΩ@10V;2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
51pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
220W
Input Capacitance(Ciss):
8.904nF@30V
Gate Charge(Qg):
148nC@10V
Mfr. Part #:
SP60N01BGTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP60N01BGTQ is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as chargers, battery management, and power switching.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 60N01BG
- Package: TO-220-3L
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (Tc=25) Silicon limit | ID | 250 | A | |
| Continuous Drain Current (Tc=25) Package limit | ID | 200 | A | |
| Pulsed Drain Current | IDM | 800 | A | |
| Single Pulse Avalanche Energy1 | EAS | 1849 | mJ | VDD=30V,VGS=10V,L=0.5mH,RG=25Ω |
| Power Dissipation (Tc=25) | PD | 220 | W | |
| Thermal Resistance Junction-to-Case | RθJC | 0.57 | °C/W | |
| Storage Temperature Range | TSTG | -55 to 150 | °C | |
| Operating Junction Temperature Range | TJ | -55 to 150 | °C | |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V , ID=250µA |
| Drain Cut-Off Current | IDSS | - | μA | VDS=48V , VGS=0V |
| Gate Leakage Current | IGSS | - | nA | VGS=±20V , VDS=0V |
| Gate Threshold Voltage | VGS(th) | 1.0 - 2.5 | V | VGS=VDS , ID =250µA |
| Drain-Source ON Resistance | RDS(ON) | 1.5 - 2.1 | mΩ | VGS=10V , ID=30A |
| Drain-Source ON Resistance | RDS(ON) | 2.0 - 2.8 | mΩ | VGS=4.5V , ID=20A |
| Input Capacitance | Ciss | 8904 | pF | VDS=30V , VGS=0V , f=1MHz |
| Output Capacitance | Coss | 2508 | pF | |
| Reverse Transfer Capacitance | Crss | 51 | pF | |
| Total Gate Charge | Qg | 148 | nC | VDS=30V , VGS=10V , ID=30A |
| Gate-Source Charge | Qgs | 28 | nC | |
| Gate-Drain Charge | Qgd | 24 | nC | |
| Turn-On Delay Time | td(on) | 48 | nS | VDD=30V,VGS=10V,RG=2Ω, ID=30A |
| Rise Time | tr | 32 | nS | |
| Turn-Off Delay Time | td(off) | 221 | nS | |
| Fall Time | tf | 136 | nS | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | IS = 1A, VGS = 0V |
| Maximum Body-Diode Continuous Current | IS | 200 | A | |
| Reverse Recovery Time | Trr | 86 | nS | IS=20A, di/dt=100A/us, TJ=25°C |
| Reverse Recovery Charge | Qrr | 116 | nC |
Note: 1 The EAS test condition is VDD=30V,VGS=10V,L=0.5mH,RG=25Ω.
Package Information (TO-220-3L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. |
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. |
| Φ | 3.400 | 3.800 | 0.134 | 0.150 |
2504101957_Siliup-SP60N01BGTQ_C42403237.pdf
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