40V N Channel MOSFET Siliup SP40N02ATQ with high current capacity and tested avalanche energy rating
Key Attributes
Model Number:
SP40N02ATQ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
760pF
Number:
-
Output Capacitance(Coss):
1.94nF
Pd - Power Dissipation:
246W
Input Capacitance(Ciss):
10.8nF
Gate Charge(Qg):
147nC@10V
Mfr. Part #:
SP40N02ATQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP40N02ATQ is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for power switching applications, DC-DC converters, and power management systems, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications. The device is supplied in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N02ATQ
- Package: TO-220-3L-C (1:G 2:D 3:S)
- Marking: 40N02A
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on)TYP | @10V | 1.8 | 2.8 | m | ||
| RDS(on)TYP | @4.5V | 2.8 | 3.8 | m | ||
| ID | 180 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 180 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 120 | A | ||
| Pulsed Drain Current | IDM | 720 | A | |||
| Single Pulsed Avalanche Energy | EAS | 841 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 246 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.51 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | - | 1.8 | 2.8 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 2.8 | 3.8 | m |
| Input Capacitance | Ciss | VDS=20V, VGS=0V, f=1MHz | - | 10800 | - | pF |
| Output Capacitance | Coss | - | 1940 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 760 | - | pF | |
| Total Gate Charge | Qg | VDS=20V, VGS=10V, ID=30A | - | 147 | - | nC |
| Gate-Source Charge | Qgs | - | 50 | - | nC | |
| Gate-Drain Charge | Qgd | - | 31 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V, RG=2.7, ID=30A | - | 26 | - | nS |
| Rise Time | Tr | - | 30 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 59 | - | nS | |
| Fall Time | Tf | - | 19 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 180 | A | |
| Reverse recover time | Trr | ISD=30A, di/dt=100A/us, Tj=25 | - | 23 | - | nS |
| Reverse recovery charge | Qrr | - | 29 | - | nC | |
| Package Information (TO-220-3L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 2.700 | 2.900 | ||||
| B | 6.400 | 6.800 | ||||
| C | 0.300 | 0.700 | ||||
| D | 11 | 15 | ||||
| E | 1.1 | 1.5 | ||||
| F | 0.7 | 0.9 | ||||
| G | 2.54 TYP | |||||
| W | 9.8 | 10.2 | ||||
| H | 4.3 | 4.7 | ||||
| H1 | 2.2 | 2.5 | ||||
| K | 2.7 | 3.1 | ||||
| L | 14.8 | 16.8 | ||||
| L1 | 9.0 | 9.4 | ||||
| N | 1.2 | 1.4 | ||||
| P | 12.7 | 13.3 | ||||
| P1 | 7.6 | 8.2 | ||||
| Q | 3.5 | 3.7 | ||||
2504101957_Siliup-SP40N02ATQ_C41354882.pdf
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