Low On Resistance P Channel MOSFET 16V Siliup SP16P03NJ Suitable for Power Management and Conversion

Key Attributes
Model Number: SP16P03NJ
Product Custom Attributes
Drain To Source Voltage:
16V
Configuration:
-
Current - Continuous Drain(Id):
74A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.4mΩ@4.5V;4.5mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
876pF
Number:
1 P-Channel
Output Capacitance(Coss):
967pF
Pd - Power Dissipation:
42W
Input Capacitance(Ciss):
5.434nF
Gate Charge(Qg):
60nC@4.5V
Mfr. Part #:
SP16P03NJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP16P03NJ is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance, and 100% single pulse avalanche energy testing. This MOSFET is ideal for applications such as DC-DC converters and power management systems.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP16P03NJ
  • Technology: P-Channel MOSFET
  • Package: PDFN3X3-8L
  • Origin: China (implied by www.siliup.com and company name)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -16 V
RDS(on) -4.5V 3.4 m
RDS(on) -2.5V 4.5 m
Continuous Drain Current ID -74 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -16 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID (Tc=25C) -74 A
Continuous Drain Current ID (Tc=100C) -49 A
Pulse Drain Current IDM Tested -296 A
Single Pulse Avalanche Energy EAS 1 81 mJ
Power Dissipation PD (Tc=25C) 42 W
Thermal Resistance Junction-to-Case RJC 4.9 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -16 - V
Drain-Source Leakage Current IDSS VDS=-12V, VGS=0V, TJ=25 - - -1 uA
Gate-Source Leakage Current IGSS VGS=12V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS, ID =-250uA -0.5 -0.7 -1.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-20A - 3.4 4.2 m
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V, ID=-20A - 4.5 6 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-10V, VGS=0V, f=1MHz - 5434 - pF
Output Capacitance Coss - 967 - pF
Reverse Transfer Capacitance Crss - 876 - pF
Total Gate Charge Qg VDS=-10V, VGS=-4.5V, ID=-20A - 60 - nC
Gate-Source Charge Qgs - 7 - nC
Gate-Drain Charge Qgd - 19 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-10V, VGS=-4.5V, RG=3, ID=-20A - 16 - nS
Rise Time Tr - 21 -
Turn-Off Delay Time Td(off) - 68 -
Fall Time Tf - 52 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V, IS=-1A, TJ=25 - - -1.2 V
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.650 0.850 0.026 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 3.100 0.114 0.122
D1 2.300 2.600 0.091 0.102
E 2.900 3.100 0.114 0.122
E1 3.150 3.450 0.124 0.136
E2 1.535 1.935 0.060 0.076
b 0.200 0.400 0.008 0.016
e 0.550 0.750 0.022 0.030
L 0.300 0.500 0.012 0.020
L1 0.180 0.480 0.007 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 0.515 0.012 0.020
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2504101957_Siliup-SP16P03NJ_C41354996.pdf

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