Dual N Channel MOSFET Siliup SP20N14KDNQ 20V Rated Device with Low On Resistance and ESD Protection
Key Attributes
Model Number:
SP20N14KDNQ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
RDS(on):
14mΩ@4.5V;25mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
129pF
Number:
2 N-Channel
Output Capacitance(Coss):
228pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
982pF
Gate Charge(Qg):
8.7nC@4.5V
Mfr. Part #:
SP20N14KDNQ
Package:
PDFN-6L(2x2)
Product Description
Product Overview
The SP20N14KDNQ is a 20V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficiency and reliability, it features low on-resistance and low input capacitance, making it ideal for power management functions and DC-DC converters. This device is also ESD protected up to 2KV, ensuring robust performance in demanding applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP20N14KDNQ
- Device Code: 20N14KD
- Package: PDFN2X2-6L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| On-Resistance | RDS(on) | 4.5V | 14 | 18 | m | |
| On-Resistance | RDS(on) | 2.5V | 25 | 33 | m | |
| Continuous Drain Current | ID | 6 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | 6 | A | |||
| Pulsed Drain Current | IDM | 24 | A | |||
| Power Dissipation | PD | 2.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 50 | /W | |||
| Operating Junction Temperature Range | TSTG | -55 | +150 | |||
| Storage Temperature Range | TJ | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 0.4 | 0.65 | 1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =3A | - | 14 | 18 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =2.5V, ID =2A | - | 25 | 33 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 982 | - | pF |
| Output Capacitance | Coss | - | 228 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 129 | - | pF | |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS =10V,VGS=4.5V,ID =4A | - | 8.7 | - | nC |
| Gate-Source Charge | Qgs | - | 2.5 | - | nC | |
| Gate-Drain Charge | Qg d | - | 3.1 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=10V, VGS=4.5V , RG=3, ID=1A | - | 1.3 | - | nS |
| Rise Time | Tr | - | 2.5 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 28 | - | nS | |
| Fall Time | Tf | - | 8 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
Package Information
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.700 | 0.800 | 0.028 | 0.031 |
| A1 | 0.000 | 0.050 | 0.000 | 0.002 |
| A3 | 0.203REF. | 0.008REF. | ||
| D | 1.900 | 2.100 | 0.075 | 0.083 |
| E | 1.900 | 2.100 | 0.075 | 0.083 |
| D1 | 0.900 | 1.100 | 0.035 | 0.043 |
| E1 | 0.520 | 0.720 | 0.020 | 0.028 |
| b | 0.250 | 0.350 | 0.010 | 0.014 |
| e | 0.650 TYP. | 0.026 TYP. | ||
| k | 0.200MIN. | 0.008MIN. | ||
| L | 0.200 | 0.300 | 0.008 | 0.012 |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP20N14KDNQ | PDFN2X2-6L | 3000 |
2504101957_Siliup-SP20N14KDNQ_C41355061.pdf
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