Power MOSFET Siliup SP015N09GHTQ 150V N Channel Fast Switching Low Gate Charge Device
Key Attributes
Model Number:
SP015N09GHTQ
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
90A
RDS(on):
9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
268pF
Pd - Power Dissipation:
180W
Input Capacitance(Ciss):
3.31nF
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP015N09GHTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP015N09GHTQ is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co., Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It is supplied in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co., Ltd.
- Product Code: SP015N09GHTQ
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 150 | V |
| RDS(on)TYP | - | @10V | - | 9 | - | m |
| ID | - | - | - | - | 90 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | Ta=25 | - | - | 150 | V |
| Gate-Source Voltage | VGS | Ta=25 | - | 20 | - | V |
| Continuous Drain Current (Tc=25) | ID | Tc=25 | - | - | 90 | A |
| Continuous Drain Current (Tc=100) | ID | Tc=100 | - | - | 60 | A |
| Pulsed Drain Current | IDM | - | - | - | 360 | A |
| Single Pulse Avalanche Energy | EAS | - | - | 462 | - | mJ |
| Power Dissipation (Tc=25) | PD | Tc=25 | - | - | 180 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | 0.69 | - | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 9 | 12 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 3310 | - | pF |
| Output Capacitance | Coss | - | - | 268 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 9 | - | pF |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=30A | - | 30 | - | nC |
| Gate-Source Charge | Qgs | - | - | 17.8 | - | - |
| Gate-Drain Charge | Qgd | - | - | 7 | - | - |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 75V, ID = 30A, RG = 6 | - | 13 | - | nS |
| Rise Time | tr | - | - | 25 | - | - |
| Turn-Off Delay Time | td(off) | - | - | 31 | - | - |
| Fall Time | tf | - | - | 25 | - | - |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 90 | A |
| Body Diode Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 76 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | - | 175 | - | nC |
| Package Information | ||||||
| Package Type | - | - | - | - | TO-220-3L | - |
| Pin Configuration | - | - | 1:G | 2:D | 3:S | - |
| Unit/Tube | - | - | - | - | 50 | - |
2504101957_Siliup-SP015N09GHTQ_C22466809.pdf
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