120V N Channel MOSFET Siliup SP012N03BGHTF with Fast Switching and Low Gate Charge in TO 247 Package
Key Attributes
Model Number:
SP012N03BGHTF
Product Custom Attributes
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 N-channel
Output Capacitance(Coss):
835pF
Input Capacitance(Ciss):
5.64nF
Pd - Power Dissipation:
270W
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
SP012N03BGHTF
Package:
TO-247
Product Description
Product Overview
The SP012N03BGHTF is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-speed power switching applications, it features fast switching speeds, low gate charge, and low RDS(on). Its low reverse transfer capacitances and 100% single pulse avalanche energy test make it suitable for DC-DC converters and power management systems. This MOSFET comes in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP012N03BGHTF
- Channel Type: N-Channel
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 120 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 200 | A | |||
| Continuous Drain Current (Tc=100) | ID | 135 | A | |||
| Pulsed Drain Current | IDM | 800 | A | |||
| Single Pulse Avalanche Energy | EAS | 900 | mJ | |||
| Power Dissipation (Tc=25) | PD | 270 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.46 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 120 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 96V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 50A | - | 3.5 | 4.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 60V, VGS = 0V, f = 1.0MHz | - | 5640 | - | pF |
| Output Capacitance | Coss | - | 835 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 13 | - | pF | |
| Total Gate Charge | Qg | VDS=60V , VGS=10V , ID=75A | - | 152 | - | nC |
| Gate-Source Charge | Qgs | - | 43 | - | nC | |
| Gate-Drain Charge | Qgd | - | 46 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 75A, RG = 1.6 | - | 25 | - | nS |
| Rise Time | tr | - | 15 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 52 | - | nS | |
| Fall Time | tf | - | 18 | - | nS | |
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 200 | A | |
| Reverse Recovery Time | Trr | IS=100A, di/dt=100A/us, TJ=25 | - | 92 | - | nS |
| Reverse Recovery Charge | Qrr | - | 183 | - | nC | |
Package Information
TO-247 Package Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
2504101957_Siliup-SP012N03BGHTF_C22385384.pdf
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