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quality N Channel Planar MOSFET Siliup SP9N50TH 500V Device Offering Low Rdson and High Frequency Switching Performance factory
quality N Channel Planar MOSFET Siliup SP9N50TH 500V Device Offering Low Rdson and High Frequency Switching Performance factory

N Channel Planar MOSFET Siliup SP9N50TH 500V Device Offering Low Rdson and High Frequency Switching Performance

Key Attributes
Model Number: SP9N50TH
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
680mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF
Number:
1 N-channel
Output Capacitance(Coss):
104pF
Pd - Power Dissipation:
178W
Input Capacitance(Ciss):
1.106nF
Gate Charge(Qg):
19.4nC@10V
Mfr. Part #:
SP9N50TH
Package:
TO-252
Product Description

Product Overview

The SP9N50TH is a 500V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers fast switching, low gate charge, and low Rdson, making it ideal for high-frequency switching applications. It is also 100% tested for single pulse avalanche energy. Key applications include DC-DC converters, and it is particularly suited for synchronous rectification.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Technology: Planar MOSFET
  • Channel Type: N-Channel
  • Package: TO-252
  • Device Code: 9N50

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Breakdown Voltage (Drain-Source) V(BR)DSS 500 V
On-Resistance (Typical) RDS(on)TYP @10V 0.68
Continuous Drain Current ID 9 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) 500 V
Gate-Source Voltage VGS (Ta=25) 30 V
Continuous Drain Current (TC=25) ID 9 A
Continuous Drain Current (TC=100) ID 6 A
Pulsed Drain Current IDM 36 A
Single Pulse Avalanche Energy EAS (1) 500 mJ
Power Dissipation (TC=25) PD 178 W
Thermal Resistance (Junction-to-Case) RJC 0.7 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 500 - - V
Drain-Source Leakage Current IDSS VDS=400V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=30V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2 3 4 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=4.5A - 0.68 0.85
Dynamic Characteristics
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 1106 - pF
Output Capacitance Coss - 104 - pF
Reverse Transfer Capacitance Crss - 33 - pF
Total Gate Charge Qg VDS=400V , VGS=10V , ID=9A - 19.4 - nC
Gate-Source Charge Qgs - 4.7 -
Gate-Drain Charge Qg d - 7.2 -
Switching Characteristics
Turn-On Delay Time Td(on) VDD=250V VGS=10V , RG=25, ID=9A - 24 - nS
Rise Time Tr - 45 -
Turn-Off Delay Time Td(off) - 57 -
Fall Time Tf - 35 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 9 A
Reverse Recovery Time Trr IS=9A, di/dt=100A/us, TJ=25 - 317 - nS
Reverse Recovery Charge Qrr - 4.1 - uC
Package Information (TO-252)
Dimensions (Millimeters) Symbol Min. Max. Symbol Dimensions (Inches) Min. Max.
A 2.200 2.400 A 0.087 0.094
A1 0.000 0.127 A1 0.000 0.005
b 0.660 0.860 b 0.026 0.034
c 0.460 0.580 c 0.018 0.023
D 6.500 6.700 D 0.256 0.264
D1 5.100 5.460 D1 0.201 0.215
D2 4.830 REF. D2 0.190 REF.
E 6.000 6.200 E 0.236 0.244
e 2.186 2.386 e 0.086 0.094
L 9.800 10.400 L 0.386 0.409
L1 2.900 REF. L1 0.114 REF.
L2 1.400 1.700 L2 0.055 0.067
L3 1.600 REF. L3 0.063 REF.
L4 0.600 1.000 L4 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 h 0.000 0.012
V 5.350 REF. V 0.211 REF.

2504101957_Siliup-SP9N50TH_C42372381.pdf

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