100V N Channel MOSFET Siliup SP010N03BGHTD Featuring Low Gate Charge and TO 263 Package Design

Name: 100V N Channel MOSFET Siliup SP010N03BGHTD Featuring Low Gate Charge and TO 263 Package Design
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: SP010N03BGHTD
Availability: InStock

Key Attributes

Model Number: SP010N03BGHTD

Product Custom Attributes

Drain To Source Voltage:

100V

Current - Continuous Drain(Id):

170A

Operating Temperature -:

-55℃~+150℃

RDS(on):

3.2mΩ@10V

Gate Threshold Voltage (Vgs(th)):

2.7V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

8.5pF

Number:

1 N-channel

Input Capacitance(Ciss):

4.396nF

Output Capacitance(Coss):

1.361nF

Pd - Power Dissipation:

205W

Gate Charge(Qg):

90nC@10V

Mfr. Part #:

SP010N03BGHTD

Package:

TO-263

Product Description

Product Overview

The SP010N03BGHTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on) for efficient operation. The device is tested for 100% single pulse avalanche energy and comes in a TO-263 package.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP010N03BGHTD
Channel Type: N-Channel
Package: TO-263
Marking: 010N03BGH

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-Source Voltage	V(BR)DSS				100	V
RDS(on)	RDS(on)	@10V		3.2		m
Continuous Drain Current	ID	(Tc=25)			170	A
Continuous Drain Current	ID	(Tc=100)			115	A
Drain-Source Voltage	VDS				100	V
Gate-Source Voltage	VGS				20	V
Pulsed Drain Current	IDM				680	A
Single Pulse Avalanche Energy	EAS				3136	mJ
Power Dissipation	PD	(Tc=25)			205	W
Thermal Resistance Junction-to-Case	RJC			0.61		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	100	-	-	V
Drain Cut-Off Current	IDSS	VDS=80V , VGS=0V , TJ=25	-	-	1	A
Gate Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	2.0	2.7	4.0	V
Drain-Source ON Resistance	RDS(ON)	VGS=10V , ID=20A	-	3.2	4.6	m
Input Capacitance	Ciss	VDS=50V , VGS=0V , f=1MHz	-	4398	-	pF
Output Capacitance	Coss		-	1361	-	pF
Reverse Transfer Capacitance	Crss		-	8.5	-	pF
Total Gate Charge	Qg	VDS=50V , VGS=10V , ID=125A	-	90	-	nC
Gate-Source Charge	Qgs		-	13	-
Gate-Drain Charge	Qg		-	19	-
Turn-On Delay Time	td(on)	VDD=50V, VGS=10V , RG=1.6, ID=125A	-	20	-	nS
Rise Time	tr		-	70	-
Turn-Off Delay Time	td(off)		-	50	-
Fall Time	tf		-	16	-
Source-Drain Diode Forward Voltage	VSD	IS = 1A, VGS = 0V	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	170	A
Reverse Recovery Time	Trr	IS=50A, di/dt=100A/us, TJ=25	-	86	-	nS
Reverse Recovery Charge	Qrr		-	206	-	nC

Note: The test condition for EAS is VDD=50V, VGS=10V, L=0.5mH, RG=25.

Package Information

Package: TO-263

Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	4.470	4.670	0.176	0.184
A1	0.000	0.150	0.000	0.006
B	1.120	1.420	0.044	0.056
b	0.710	0.910	0.028	0.036
b1	1.170	1.370	0.046	0.054
c	0.310	0.530	0.012	0.021
c1	1.170	1.370	0.046	0.054
D	10.010	10.310	0.394	0.406
E	8.500	8.900	0.335	0.350
e	2.540 TYP.	0.100 TYP.
e1	4.980	5.180	0.196	0.204
L	14.940	15.500	0.588	0.610
L1	4.950	5.450	0.195	0.215
L2	2.340	2.740	0.092	0.108
L3	1.300	1.700	0.051	0.067
	0	8	0	8
V	5.600 REF.	0.220 REF.

Order Information:

Device	Package	Unit/Tape
SP010N03BGHTD	TO-263	800

2504101957_Siliup-SP010N03BGHTD_C22385366.pdf

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