N Channel MOSFET Siliup BSS123K 100V Drain Source Voltage with SOT 23 Package and ESD Protection
Key Attributes
Model Number:
BSS123K
Product Custom Attributes
Drain To Source Voltage:
100V
Configuration:
-
Current - Continuous Drain(Id):
170mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
15pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
60pF
Gate Charge(Qg):
2nC@10V
Mfr. Part #:
BSS123K
Package:
SOT-23
Product Description
Product Overview
The BSS123K is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device features ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters. The device is available in a SOT-23 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: BSS123K
- Channel Type: N-Channel MOSFET
- Package: SOT-23
- ESD Protection: 2KV
- Device Code: 123K
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| Static Drain-Source On-Resistance | RDS(on)TYP | @10V | 4 | |||
| Continuous Drain Current | ID | 170 | mA | |||
| Static Drain-Source On-Resistance | RDS(on)TYP | @4.5V | 4.3 | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | ||
| Continuous Drain Current | ID | 170 | mA | |||
| Pulse Drain Current | IDM | Tested | 680 | mA | ||
| Power Dissipation | PD | 350 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 357 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1.3 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =250mA | - | 4 | 6 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 4.3 | 9 | |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 60 | - | pF |
| Output Capacitance | Coss | - | 15 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 6 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=10V , ID=220mA | - | 2 | - | nC |
| Gate-Source Charge | Qgs | - | 0.25 | - | ||
| Gate-Drain Charge | Qg | - | 0.4 | - | ||
| Turn-On Delay Time | td(on) | VDD=30V VGS=10V , RG=50 , ID=280mA | - | 8 | - | nS |
| Turn-On Rise Time | tr | - | 8 | - | ||
| Turn-Off Delay Time | td(off) | - | 13 | - | ||
| Turn-Off Fall Time | tf | - | 16 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | 0.95 REF. | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.55 REF. | |||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2504101957_Siliup-BSS123K_C41349577.pdf
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