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quality Telephony and communication PNP transistor SINO-IC SEBT3906U for low current low voltage applications factory
quality Telephony and communication PNP transistor SINO-IC SEBT3906U for low current low voltage applications factory

Telephony and communication PNP transistor SINO-IC SEBT3906U for low current low voltage applications

Key Attributes
Model Number: SEBT3906U
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Transition Frequency(fT):
300MHz
Vce Saturation(VCE(sat)):
200mV@10mA,1mA
Number:
1 PNP
Type:
PNP
Pd - Power Dissipation:
250mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
SEBT3906U
Package:
SOT-323
Product Description

Product Overview

A PNP switching transistor designed for low current and low voltage applications. This device is suitable for use in telephony and professional communication equipment. It features a complementary NPN transistor, the SEBT3904U.

Product Attributes

  • Brand: MICROELECTRONCS CO., LTD. (SINO-IC)
  • Origin: SHANGHAI
  • Package Type: SOT323
  • Complementary NPN Transistor: SEBT3904U

Technical Specifications

Parameter Symbol Conditions Min. Max. Unit
Absolute Maximum Ratings (Ta=25)
Collector-base voltage VCBO Open emitter - -60 V
Collector-emitter voltage VCEO Open base - -40 V
Emitter-base voltage VEBO Open collector - -6 V
Collector current (DC) IC - - -200 mA
Peak collector current ICM - - -200 mA
Peak base current IBM - - -100 mA
Total power dissipation Ptot Tamb ≤ 25 °C; note 1 - 250 mW
Storage temperature Tstg - -65 +150 °C
Junction temperature Tj - -65 +150 °C
Operating ambient temperature Tamb - -65 +150 °C
Electrical Characteristics (Ta=25)
Collector cut-off current ICBO IE = 0; VCB =-30V - -50 nA
Emitter cut-off current IEBO IC = 0; VEB =-6V - -50 nA
DC current gain hFE VCE = 1 V; note 1; Fig.2; IC =-0.1 mA 60 - -
VCE = 1 V; note 1; Fig.2; IC =-1 mA 80 - -
VCE = 1 V; note 1; Fig.2; IC =-10 mA 100 300 -
VCE = 1 V; note 1; Fig.2; IC =-50 mA 60 - -
VCE = 1 V; note 1; Fig.2; IC =-100 mA 30 - -
Collector-emitter saturation voltage VCEsat IC =-10 mA; IB =-1 mA - -200 mV
Collector-emitter saturation voltage VCEsat IC =-50 mA; IB =-5 mA - -200 mV
Base-emitter saturation voltage VBEsat IC =-10 mA; IB =-1 mA -650 -850 mV
Base-emitter saturation voltage VBEsat IC =-50 mA; IB =-5 mA - -950 mV
Collector capacitance CC IE = ie = 0; VCB = 5 V; f = 1 MHz - 4 pF
Emitter capacitance Ce IC = ic = 0; VBE = 500 mV; f = 1 MHz - 8 pF
Transition frequency fT IC = 10 mA; VCE = 20 V; f = 100 MHz 300 - MHz
Noise figure F IC = 100 mA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz - 5 dB
Switching Times (between 10% and 90% levels); (see Fig.3)
Turn-on time ton ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA - 65 ns
Delay time td ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA - 35 ns
Rise time tr ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA - 35 ns
Turn-off time toff ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA - 240 ns
Storage time ts ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA - 200 ns
Fall time tf ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA - 50 ns

2410121332_SINO-IC-SEBT3906U_C393130.pdf
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