Durable Siliup SP40N08TH 40V N Channel MOSFET designed for DC DC converters and load switching tasks
Key Attributes
Model Number:
SP40N08TH
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
55A
RDS(on):
8mΩ@10V;11mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
158pF
Number:
1 N-channel
Output Capacitance(Coss):
210pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
1.785nF
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
SP40N08TH
Package:
TO-252-2L
Product Description
Product Overview
The SP40N08TH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. Engineered for efficient power management, it features fast switching, low gate charge, and low RDS(on) at various gate drive voltages (8m at 10V and 11m at 4.5V). This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching.
Product Attributes
- Brand: Siliup Semiconductor Technology Co., Ltd.
- Product Code: SP40N08TH
- Device Code: 40N08
- Channel Type: N-Channel
- Package: TO-252
- Website: www.siliup.com
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on) Typ. | RDS(on) | @10V | 8 | 12 | m | |
| RDS(on) Typ. | RDS(on) | @4.5V | 11 | 18 | m | |
| Continuous Drain Current | ID | 55 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (TC=25) | 55 | A | ||
| Continuous Drain Current | ID | (TC=100) | 37 | A | ||
| Pulsed Drain Current | IDM | 220 | A | |||
| Single Pulse Avalanche Energy | EAS | 51 | mJ | |||
| Power Dissipation | PD | (TC=25) | 50 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.5 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=12A | - | 8 | 12 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=6A | - | 11 | 18 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 1785 | - | pF |
| Output Capacitance | Coss | - | 210 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 158 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=10A | - | 31 | - | nC |
| Gate-Source Charge | Qgs | - | 4 | - | nC | |
| Gate-Drain Charge | Qgd | - | 11 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V ,VGS=10V , RG=3, ID=10A | - | 6 | - | nS |
| Rise Time | Tr | - | 16 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 31 | - | nS | |
| Fall Time | Tf | - | 15 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 55 | A | |
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, TJ=25 | - | 31 | - | nS |
| Reverse Recovery Charge | Qrr | - | 23 | - | nC | |
Package Information (TO-252)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. |
2504101957_Siliup-SP40N08TH_C41355049.pdf
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