60V Dual N Channel MOSFET Siliup SP60N1K5KDTW for Battery Switch and DC DC Converter Electronics
Key Attributes
Model Number:
SP60N1K5KDTW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
220mA
RDS(on):
1.5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
2 N-Channel
Output Capacitance(Coss):
6pF
Input Capacitance(Ciss):
12pF
Pd - Power Dissipation:
320mW
Gate Charge(Qg):
1.34nC@15V
Mfr. Part #:
SP60N1K5KDTW
Package:
SOT-363
Product Description
Product Overview
The SP60N1K5KDTW is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device offers ESD protection up to 2KV. Its key applications include battery switches and DC/DC converters, providing reliable performance in demanding electronic circuits.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N1K5KDTW
- Package: SOT-363
- Circuit Diagram: Provided
- Marking: 15K :Device Code
- ESD Protected: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60V | V | ||||
| RDS(on)TYP | @10V | 1.5 | ||||
| RDS(on)TYP | @4.5V | 1.8 | ||||
| ID | 220mA | |||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | ||
| Continuous Drain Current | ID | 220 | mA | |||
| Pulse Drain Current | IDM | 880 | mA | |||
| Power Dissipation | PD | 320 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 390 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | 1.0 | 1.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =200mA | - | 1.5 | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 1.8 | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =2.5V, ID =100mA | - | 2.5 | 8 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 12 | - | pF |
| Output Capacitance | Coss | - | 6 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 2.5 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=15V , ID=1A | - | 1.34 | - | nC |
| Gate-Source Charge | Qgs | - | 0.29 | - | ||
| Gate-Drain Charge | Qg d | - | 0.2 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=2.3 , ID=1A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 18 | - | ||
| Turn-Off Delay Time | td(off) | - | 8 | - | ||
| Turn-Off Fall Time | tf | - | 14 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP60N1K5KDTW | SOT-363 | 3000 | ||||
| Package Information (SOT-363) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.00 | ||||
| A1 | 0.00 | 0.10 | ||||
| B | 0.10 | 0.30 | ||||
| b1 | 1.30 | |||||
| D | 1.80 | 2.20 | ||||
| E | 2.00 | 2.20 | ||||
| E1 | 1.15 | 1.35 | ||||
| e | 0.65 (TYP.) | |||||
| L | 0.10 | 0.25 | ||||
| L1 | 0.15 | 0.4 | ||||
2504101957_Siliup-SP60N1K5KDTW_C41354828.pdf
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