Power Conversion MOSFET Siliup SP05N100TC 1000V N Channel Planar with Low RDS on and Fast Switching
Key Attributes
Model Number:
SP05N100TC
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
40Ω@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Number:
1 N-channel
Reverse Transfer Capacitance (Crss@Vds):
1.2pF
Output Capacitance(Coss):
43pF
Input Capacitance(Ciss):
472pF
Pd - Power Dissipation:
3.6W
Gate Charge(Qg):
7.5nC@10V
Mfr. Part #:
SP05N100TC
Package:
SOT-223
Product Description
Product Overview
The SP05N100TC is a 1000V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET offers fast switching speeds, low gate charge, and a low RDS(on) of 40 at 10V. It is ideal for DC/DC converters and synchronous rectification, providing efficient power conversion in demanding environments. The device comes in a SOT-223 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP05N
- Channel Type: N-Channel
- Technology: Planar MOSFET
- Package: SOT-223
- Device Code: 05N100
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit | ||
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 1000 | V | |||
| RDS(on) Typ. | @10V | 40 | ||||
| Continuous Drain Current | ID | 0.5 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 1000 | V | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Continuous Drain Current | ID | 0.5 | A | |||
| Pulse Drain Current | IDM | Tested | 2 | A | ||
| Power Dissipation | PD | 3.6 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 35 | C/W | |||
| Storage Temperature Range | TSTG | -55 to 150 | C | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 1000 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=800V , VGS=0V | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=30V , VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =0.3A | - | 40 | 55 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 472 | - | pF |
| Output Capacitance | Coss | - | 43 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 1.2 | - | pF | |
| Total Gate Charge | Qg | VDS=800V , VGS=10V , ID=0.3A | - | 7.5 | - | nC |
| Gate-Source Charge | Qgs | - | 2.5 | - | nC | |
| Gate-Drain Charge | Qg d | - | 2.7 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=500V VGS=10V , RG=25, ID=0.3A | - | 17 | - | nS |
| Turn-On Rise Time | tr | - | 22 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 17.3 | - | nS | |
| Turn-Off Fall Time | tf | - | 18 | - | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
2504101957_Siliup-SP05N100TC_C42372396.pdf
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