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quality General Purpose NPN Transistor Slkor MMBT2222AT SOT523 Package Suitable for Electronic Circuits factory
quality General Purpose NPN Transistor Slkor MMBT2222AT SOT523 Package Suitable for Electronic Circuits factory

General Purpose NPN Transistor Slkor MMBT2222AT SOT523 Package Suitable for Electronic Circuits

Key Attributes
Model Number: MMBT2222AT
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
300@150mA,10V
Transition Frequency(fT):
300MHz
Vce Saturation(VCE(sat)):
1V@500mA,50mA
Type:
NPN
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT2222AT
Package:
SOT-523
Product Description

Product Overview

The MMBT2222AT is an NPN transistor designed for general-purpose applications. It is complementary to the MMBT2907AT and features a small package size. This device is suitable for various electronic circuits requiring reliable switching and amplification.

Product Attributes

  • Brand: slkormicro
  • Model: MMBT2222AT
  • Package Type: SOT-523
  • Transistor Type: NPN

Technical Specifications

Parameter Symbol Rating Unit Conditions
Collector - Base Voltage VCBO 75 V Ta = 25
Collector - Emitter Voltage VCEO 40 V Ta = 25
Emitter - Base Voltage VEBO 6 V Ta = 25
Collector Current - Continuous IC 600 mA Ta = 25
Collector Power Dissipation PC 150 mW Ta = 25
Thermal Resistance, Junction to Ambient RJA 833 C/W Ta = 25
Junction Temperature TJ 150
Storage Temperature Range Tstg -55 to 150
Collector-base breakdown voltage VCBO 75 V Ic= 100 A IE= 0
Collector-emitter breakdown voltage VCEO 40 V Ic= 10 mA IB= 0
Emitter - base breakdown voltage VEBO 6 V IE= 100A IC= 0
Collector-base cut-off current ICBO 100 nA VCB= 75 V , IE= 0
Collector cut-off current ICEX 100 nA VCE= 60 V , VEB(off)=3V
Emitter cut-off current IEBO 100 nA VEB= 6V , IC=0
DC current gain hFE(1) 35 VCE= 10V, IC= 0.1mA
DC current gain hFE(2) 50 VCE= 10V, IC=1mA
DC current gain hFE(3) 75 VCE= 10V, IC=10mA
DC current gain hFE(4) 100 VCE= 10V, IC= 150mA
DC current gain hFE(5) 300 VCE= 10V, IC= 500mA
Delay time td 10 nS VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA
Rise time tr 25 nS VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA
Storage time ts 225 nS VCC=30V, IC=150mA, IB1=IB2=15mA
Fall time tf 60 nS VCC=30V, IC=150mA, IB1=IB2=15mA
Collector output capacitance Cob 8 pF VCB= 10V, IE= 0, f=1MHz
Transition frequency fT 300 MHz VCE= 20V, IC= 20mA, f=100MHz
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=150 mA, IB=15mA
Collector-emitter saturation voltage VCE(sat) 1 V IC= 500 mA, IB=50mA
Base - emitter saturation voltage VBE(sat) 1.2 V IC=150 mA, IB=15mA
Base - emitter saturation voltage VBE(sat) 2 V IC= 500 mA, IB=50mA
Pin 1 Base SOT-523
Pin 2 Emitter SOT-523
Pin 3 Collector SOT-523

Dimensions (SOT-523)

Dimension Min Max Unit
A 0.30 0.45 mm
A1 0.10 0.15 mm
B 0.15 0.25 mm
c 0.07 0.13 mm
D 1.40 1.75 mm
E 0.90 1.20 mm
e 0.45 0.60 mm
e1 0.80 1.00 mm
HE 1.40 1.80 mm
Lp 0.50 0.70 mm
Q 0.10 0.30 mm
v 0.00 0.10 mm
w 0.00 0.10 mm

2405291447_Slkor-MMBT2222AT_C22446798.pdf

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