20V Dual P Channel MOSFET Siliup SP20P16DNJ Featuring Fast Switching and Low On Resistance for Power
Key Attributes
Model Number:
SP20P16DNJ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
14A
RDS(on):
16mΩ@4.5V;21mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
236pF
Number:
2 P-Channel
Output Capacitance(Coss):
255pF
Pd - Power Dissipation:
17W
Input Capacitance(Ciss):
1.275nF
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
SP20P16DNJ
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The SP20P16DNJ is a 20V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance, and 100% single pulse avalanche energy testing. This MOSFET is suitable for applications such as DC-DC converters and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP20P16DNJ
- Device Code: 20P16D
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | -20 | V | |||
| RDS(on)TYP | RDS(on)TYP | @-4.5V | 16 | m | ||
| RDS(on)TYP | RDS(on)TYP | @-2.5V | 21 | m | ||
| ID | ID | -14 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current (Tc=25C) | ID | (Tc=25C) | -14 | A | ||
| Continuous Drain Current (Tc=100C) | ID | (Tc=100C) | -9 | A | ||
| Pulse Drain Current Tested | IDM | -64 | A | |||
| Single Pulse Avalanche Energy | EAS | 45 | mJ | |||
| Power Dissipation (Tc=25C) | PD | (Tc=25C) | 17 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 7.4 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -20 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -0.4 | -0.7 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-6A | - | 16 | 20 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V, ID=-5A | - | 21 | 28 | m |
| Input Capacitance | Ciss | VDS=-6V , VGS=0V , f=1MHz | - | 1275 | - | pF |
| Output Capacitance | Coss | - | 255 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 236 | - | pF | |
| Total Gate Charge | Qg | VDS=-6V , VGS=-4.5V , ID=-5A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | 2.3 | - | ||
| Gate-Drain Charge | Qg d | - | 3.6 | - | ||
| Turn-On Delay Time | Td(on) | VDD=-6V VGS=-4.5V , RG=1, ID=-4A | - | 26 | - | nS |
| Rise Time | Tr | - | 24 | - | ||
| Turn-Off Delay Time | Td(off) | - | 45 | - | ||
| Fall Time | Tf | - | 20 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| D1 | 0.935 - 1.135 | 0.037 - 0.045 | ||||
| D2 | 0.280 - 0.480 | 0.011 - 0.019 | ||||
| E | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | ||||
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| e | 0.550 - 0.750 | 0.022 - 0.030 | ||||
| L | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | ||||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 - 0.515 | 0.012 - 0.020 | ||||
| 9 - 13 | 9 - 13 | |||||
2504101957_Siliup-SP20P16DNJ_C41355079.pdf
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