Power Switching 150V N Channel MOSFET Siliup SP015N15HTQ with Low Gate Charge and High Drain Current
Key Attributes
Model Number:
SP015N15HTQ
Product Custom Attributes
Drain To Source Voltage:
150V
Configuration:
-
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
157pF
Number:
1 N-channel
Output Capacitance(Coss):
256pF
Pd - Power Dissipation:
300W
Input Capacitance(Ciss):
6.621nF
Gate Charge(Qg):
147nC@10V
Mfr. Part #:
SP015N15HTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP015N15HTQ is a 150V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, DC-DC converters, and power management systems. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N15HTQ
- Technology: N-Channel MOSFET
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 150 | V | |||
| RDS(on) Typ | RDS(on)TYP | @10V | 15 | m | ||
| Continuous Drain Current | ID | 80 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 150 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 80 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 53 | A | ||
| Pulsed Drain Current | IDM | 320 | A | |||
| Single Pulse Avalanche Energy | EAS | 900 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 300 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.42 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=120V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 15 | 19 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=75V , VGS=0V , f=1MHz | - | 6621 | - | pF |
| Output Capacitance | Coss | - | 256 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 157 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 147 | - | nC |
| Gate-Source Charge | Qgs | - | 30 | - | ||
| Gate-Drain Charge | Qgd | - | 51 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=75V,VGS=10V,RG=2.5,ID=20A | - | 27 | - | nS |
| Rise Time | tr | - | 32 | - | ||
| Turn-Off Delay Time | td(off) | - | 94 | - | ||
| Fall Time | tf | - | 40 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 80 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 42 | - | nS |
| Reverse Recovery Charge | Qrr | - | 69 | - | nC | |
| Package Information (TO-220-3L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.400 - 4.600 | 0.173 - 0.181 | ||||
| A1 | 2.250 - 2.550 | 0.089 - 0.100 | ||||
| b | 0.710 - 0.910 | 0.028 - 0.036 | ||||
| b1 | 1.170 - 1.370 | 0.046 - 0.054 | ||||
| c | 0.330 - 0.650 | 0.013 - 0.026 | ||||
| c1 | 1.200 - 1.400 | 0.047 - 0.055 | ||||
| D | 9.910 - 10.250 | 0.390 - 0.404 | ||||
| E | 8.950 - 9.750 | 0.352 - 0.384 | ||||
| E1 | 12.650 - 13.050 | 0.498 - 0.514 | ||||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 - 5.180 | 0.196 - 0.204 | ||||
| F | 2.650 - 2.950 | 0.104 - 0.116 | ||||
| H | 7.900 - 8.100 | 0.311 - 0.319 | ||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| L | 12.900 - 13.400 | 0.508 - 0.528 | ||||
| L1 | 2.850 - 3.250 | 0.112 - 0.128 | ||||
| V | 6.900 REF. | 0.276 REF. | ||||
| 3.400 - 3.800 | 0.134 - 0.150 | |||||
2504101957_Siliup-SP015N15HTQ_C41354994.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
