Siliup SP40N04TQ N Channel MOSFET Designed for DC DC Converters and Power Management Applications
Product Overview
The SP40N04TQ is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It is designed for power switching applications, DC-DC converters, and power management systems. Key features include fast switching, low gate charge, and low RDS(on) at various gate voltages (4.1m@10V, 5m@4.5V). The device is 100% tested for single pulse avalanche energy and comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N04TQ
- Package Type: TO-220-3L
- Channel Type: N-Channel MOSFET
- Marking: 40N04 (Product code), *: Week code
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | RDS(on) | 10V | 4.1 | 6 | m | |
| RDS(on)TYP | RDS(on) | 4.5V | 5 | 7 | m | |
| ID | ID | 100 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 40 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 100 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 67 | A | ||
| Pulsed Drain Current | IDM | 400 | A | |||
| Single Pulse Avalanche Energy | EAS | 169 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 90 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.4 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 4.1 | 6 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=10A | - | 5 | 7 | m |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 3785 | - | pF |
| Output Capacitance | Coss | - | 285 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 256 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=30A | - | 71 | - | nC |
| Gate-Source Charge | Qgs | - | 15.3 | - | nC | |
| Gate-Drain Charge | Qg d | - | 14.5 | - | nC | |
| Turn-On Delay Time | td(on) | VDD=20V,VGS=10V, RG=3, ID=30A | - | 12 | - | nS |
| Rise Time | tr | - | 28 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 63 | - | nS | |
| Fall Time | tf | - | 12 | - | nS | |
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 100 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 17 | - | nS |
| Reverse Recovery Charge | Qrr | - | 9 | - | nC | |
| TO-220-3L Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 | |
| Order Information | |||
|---|---|---|---|
| Device | Package | Unit/Tube | |
| SP40N04TQ | TO-220-3L | 50 | |
2504101957_Siliup-SP40N04TQ_C41355042.pdf
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