Siliup SP40N04TQ N Channel MOSFET Designed for DC DC Converters and Power Management Applications

Key Attributes
Model Number: SP40N04TQ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.1mΩ@10V;5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
256pF
Number:
1 N-channel
Output Capacitance(Coss):
285pF
Pd - Power Dissipation:
90W
Input Capacitance(Ciss):
3.785nF
Gate Charge(Qg):
71nC@10V
Mfr. Part #:
SP40N04TQ
Package:
TO-220
Product Description

Product Overview

The SP40N04TQ is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It is designed for power switching applications, DC-DC converters, and power management systems. Key features include fast switching, low gate charge, and low RDS(on) at various gate voltages (4.1m@10V, 5m@4.5V). The device is 100% tested for single pulse avalanche energy and comes in a TO-220-3L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40N04TQ
  • Package Type: TO-220-3L
  • Channel Type: N-Channel MOSFET
  • Marking: 40N04 (Product code), *: Week code

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS V(BR)DSS 40 V
RDS(on)TYP RDS(on) 10V 4.1 6 m
RDS(on)TYP RDS(on) 4.5V 5 7 m
ID ID 100 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25, unless otherwise noted) 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID (Tc=25) 100 A
Continuous Drain Current ID (Tc=100) 67 A
Pulsed Drain Current IDM 400 A
Single Pulse Avalanche Energy EAS 169 mJ
Power Dissipation PD (Tc=25) 90 W
Thermal Resistance Junction-to-Case RJC 1.4 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 - - V
Drain Cut-Off Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 A
Gate Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.2 1.6 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=20A - 4.1 6 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=10A - 5 7 m
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 3785 - pF
Output Capacitance Coss - 285 - pF
Reverse Transfer Capacitance Crss - 256 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=30A - 71 - nC
Gate-Source Charge Qgs - 15.3 - nC
Gate-Drain Charge Qg d - 14.5 - nC
Turn-On Delay Time td(on) VDD=20V,VGS=10V, RG=3, ID=30A - 12 - nS
Rise Time tr - 28 - nS
Turn-Off Delay Time td(off) - 63 - nS
Fall Time tf - 12 - nS
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 100 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 17 - nS
Reverse Recovery Charge Qrr - 9 - nC
TO-220-3L Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150
Order Information
Device Package Unit/Tube
SP40N04TQ TO-220-3L 50

2504101957_Siliup-SP40N04TQ_C41355042.pdf

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