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quality Surface Mount P Channel MOSFET Siliup SP3407LT2C 30V 3.6A Continuous Drain Current for DC DC Converters factory
quality Surface Mount P Channel MOSFET Siliup SP3407LT2C 30V 3.6A Continuous Drain Current for DC DC Converters factory

Surface Mount P Channel MOSFET Siliup SP3407LT2C 30V 3.6A Continuous Drain Current for DC DC Converters

Key Attributes
Model Number: SP3407LT2C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@10V;70mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 P-Channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
650pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
SP3407LT2C
Package:
SOT-23
Product Description

Product Overview

The SP3407LT2C is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a continuous drain current of -3.6A and features low on-resistance characteristics at various gate-source voltages.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: P-Channel MOSFET
  • Package: SOT-23
  • Circuit Diagram Marking: 3407

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -30 V
Static Drain-Source On-Resistance RDS(on) -10V 50 m
Static Drain-Source On-Resistance RDS(on) -4.5V 70 m
Continuous Drain Current ID -3.6 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID -3.6 A
Pulse Drain Current IDM Tested -14.4 A
Power Dissipation PD 1 W
Thermal Resistance Junction-to-Ambient RJA 125 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -30 V
Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -1 -1.5 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID =-3A 50 60 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID =-2A 70 90 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz 463 pF
Output Capacitance Coss 82
Reverse Transfer Capacitance Crss 68
Total Gate Charge Qg VDS=-15V , VGS=-4.5V , ID=-4.2A 8.5 nC
Gate-Source Charge Qgs 1.8
Gate-Drain Charge Qg d 2.7
Switching Characteristics
Turn-On Delay Time td(on) VDD=-15V VGS=-10V , RG=3 , RL=3.6 18.4 nS
Turn-On Rise Time tr 11.4
Turn-Off Delay Time td(off) 39.4
Turn-Off Fall Time tf 5.2
Source-Drain Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Package Information (SOT-23)
Symbol Dimensions (mm) Min. Max.
A 0.90 1.15
A1 0.00 0.10
A2 0.90 1.05
b 0.30 0.50
c 0.08 0.15
D 2.80 3.00
E 1.20 1.40
E1 2.25 2.55
e (REF.) 0.95
e1 1.80 2.00
L (REF.) 0.55
L1 0.30 0.50
0 8

2504101957_Siliup-SP3407LT2C_C41354970.pdf

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