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quality NPN Silicon Epitaxial Planar Transistor Slkor MMDT2222A for in Amplification and Switching Circuits factory
quality NPN Silicon Epitaxial Planar Transistor Slkor MMDT2222A for in Amplification and Switching Circuits factory

NPN Silicon Epitaxial Planar Transistor Slkor MMDT2222A for in Amplification and Switching Circuits

Key Attributes
Model Number: MMDT2222A
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
DC Current Gain:
300@10V,150mA
Transition Frequency(fT):
300MHz
Vce Saturation(VCE(sat)):
300mV@150mA,15mA
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMDT2222A
Package:
SOT-363
Product Description

Product Overview

The MMDT2222A is an NPN Silicon Epitaxial Planar Transistor designed for general purpose and switching applications. It offers reliable performance with defined current gain, breakdown voltages, and saturation voltages, making it suitable for various electronic circuits requiring amplification or switching functions.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Model: MMDT2222A
  • Package: SOT-363
  • Brand: SLKORMICRO (implied by website URL)

Technical Specifications

Parameter Symbol Value Unit Conditions
Absolute Maximum Ratings
Collector Base Voltage VCBO 75 V (Ta = 25 C)
Collector Emitter Voltage VCEO 40 V (Ta = 25 C)
Emitter Base Voltage VEBO 6 V (Ta = 25 C)
Collector Current IC 600 mA (Ta = 25 C)
Power Dissipation Ptot 200 mW (Ta = 25 C)
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 to +150 C
Characteristics
DC Current Gain hFE 35 - VCE = 10 V, IC = 0.1 mA
DC Current Gain hFE 50 - VCE = 10 V, IC = 1 mA
DC Current Gain hFE 75 - VCE = 10 V, IC = 10 mA
DC Current Gain hFE 50 - VCE = 1 V, IC = 150 mA
DC Current Gain hFE 100 - VCE = 10 V, IC = 150 mA
DC Current Gain hFE 40 - VCE = 10 V, IC = 500 mA
Collector Base Cutoff Current ICBO -100 nA VCB = 60 V
Emitter Base Cutoff Current IEBO -100 nA VEB = 3 V
Collector Base Breakdown Voltage V(BR)CBO 75 V IC = 10 A
Collector Emitter Breakdown Voltage V(BR)CEO 40 V IC = 10 mA
Emitter Base Breakdown Voltage V(BR)EBO 6 V IE = 10 A
Collector Emitter Saturation Voltage VCE(sat) -0.3 V IC = 150 mA, IB = 15 mA
Collector Emitter Saturation Voltage VCE(sat) -1 V IC = 500 mA, IB = 50 mA
Base Emitter Saturation Voltage VBE(sat) -0.6 V IC = 150 mA, IB = 15 mA
Base Emitter Saturation Voltage VBE(sat) -1.2 V IC = 500 mA, IB = 50 mA
Transition Frequency fT 300 MHz VCE = 20 V, IE = 20 mA, f = 100 MHz
Collector Output Capacitance Cob -8 pF VCB = 10 V, f = 100 KHz
Emitter Input Capacitance Cib -25 pF VEB = 0.5 V, f = 100 KHz
Delay Time td -10 ns VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA
Rise Time tr -25 ns VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA
Storage Time tstg -225 ns VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA
Fall Time tf -60 ns VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA
Package Dimensions (SOT-363)
Dimension Symbol Min Max Unit
Overall Width w 1.1 1.3 mm
Overall Height E 1.8 2.2 mm
Pitch e 0.45 0.65 mm
Body Length Lp 1.15 1.35 mm
Body Width D 1.3 1.7 mm
Lead Width e1 0.15 0.4 mm
Lead Length Q 0.10 0.30 mm
Height (max) A1 0.1 0.3 mm
Max Body Thickness HE 0.20 0.40 mm
Max Lead Exposure bp 0.25 0.45 mm

2409291134_Slkor-MMDT2222A_C5122539.pdf

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