Low Gate Charge 60V N Channel MOSFET Siliup SPZ44TQ for High Frequency Power Conversion and Switching
Key Attributes
Model Number:
SPZ44TQ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
17mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 N-channel
Pd - Power Dissipation:
94W
Output Capacitance(Coss):
354pF
Input Capacitance(Ciss):
1.476nF
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
SPZ44TQ
Package:
TO-220-3L
Product Description
Product Overview
The SPZ44TQ is a 60V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching and synchronous rectification, this MOSFET offers fast switching speeds, low gate charge, and low Rdson. It is ideal for DC-DC converter applications and is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: Z44
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 25 | V | |||
| Continuous Drain Current (TC=25) | ID | 50 | A | |||
| Continuous Drain Current (TC=100) | ID | 33.3 | A | |||
| Pulsed Drain Current | IDM | 200 | A | |||
| Single Pulse Avalanche Energy | EAS | 1280 | mJ | |||
| Power Dissipation (TC=25) | PD | 94 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.33 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 25 | uA |
| Gate-Source Leakage Current | IGSS | VGS=25V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=25A | - | 17 | 22 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 1476 | - | pF |
| Output Capacitance | Coss | - | 354 | - | ||
| Reverse Transfer Capacitance | Crss | - | 90 | - | ||
| Total Gate Charge | Qg | VDS=44V , VGS=10V , ID=25A | - | 36 | - | nC |
| Gate-Source Charge | Qgs | - | 5 | - | ||
| Gate-Drain Charge | Qgd | - | 9 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=28V VGS=10V , RG=12, ID=25A | - | 12 | - | nS |
| Rise Time | Tr | - | 60 | - | ||
| Turn-Off Delay Time | Td(off) | - | 44 | - | ||
| Fall Time | Tf | - | 45 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 50 | A | |
| Reverse Recovery Time | Trr | IS=25A, di/dt=100A/us, TJ=25 | - | 65 | - | nS |
| Reverse Recovery Charge | Qrr | - | 175 | - | nC | |
| TO-220-3L Package Information (Dimensions in Millimeters) | |||
|---|---|---|---|
| Symbol | Min. | Max. | Typ. |
| A | 4.400 | 4.600 | |
| A1 | 2.250 | 2.550 | |
| b | 0.710 | 0.910 | |
| b1 | 1.170 | 1.370 | |
| c | 0.330 | 0.650 | |
| c1 | 1.200 | 1.400 | |
| D | 9.910 | 10.250 | |
| E | 8.950 | 9.750 | |
| E1 | 12.650 | 13.050 | |
| e | 2.540 | ||
| e1 | 4.980 | 5.180 | |
| F | 2.650 | 2.950 | |
| H | 7.900 | 8.100 | |
| h | 0.000 | 0.300 | |
| L | 12.900 | 13.400 | |
| L1 | 2.850 | 3.250 | |
| V | 6.900 REF. | ||
| 3.400 | 3.800 | ||
2506271732_Siliup-SPZ44TQ_C49257255.pdf
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