20V complementary MOSFET Siliup SP2011ACNK suitable for dc dc converters and motor control applications
Key Attributes
Model Number:
SP2011ACNK
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
38A
RDS(on):
11.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
274pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
332pF
Input Capacitance(Ciss):
2.872nF
Pd - Power Dissipation:
32.8W
Gate Charge(Qg):
72.8nC@4.5V
Mfr. Part #:
SP2011ACNK
Package:
PDFN5x6-8L
Product Description
Product Overview
The SP2011ACNK is a 20V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It features TrenchFET technology for excellent RDS(on) and low gate charge, enabling fast switching speeds. This MOSFET is suitable for applications such as motor control, DC-DC converters, and power management.Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP2011ACNK
- Type: Complementary MOSFET
- Package: PDFN5X6-8L
- Device Code: SP2011ACNK
Technical Specifications
| Parameter | Symbol | Condition | N-Channel Typ. | P-Channel Typ. | Unit |
|---|---|---|---|---|---|
| Product Summary | |||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 20V | -20V | ||
| On-Resistance | RDS(on) | @4.5V | 8m | ||
| On-Resistance | RDS(on) | @2.5V | 10m | ||
| On-Resistance | RDS(on) | @-4.5V | 9m | ||
| On-Resistance | RDS(on) | @-2.5V | 11m | ||
| Continuous Drain Current | ID | 35A | -38A | ||
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 20V | -20V | V |
| Gate-Source Voltage | VGS | (Ta=25 unless otherwise noted) | 12V | 12V | V |
| Continuous Drain Current | ID | (Ta=25 unless otherwise noted) | 35A | -38A | A |
| Drain Current Pulsed | IDM | (Ta=25 unless otherwise noted) | 140A | 152A | A |
| Power Dissipation | PD | (Ta=25 unless otherwise noted) | 32.8W | W | |
| Junction Temperature | TJ | (Ta=25 unless otherwise noted) | 150 | ||
| Storage Temperature | TSTG | (Ta=25 unless otherwise noted) | -55~ +150 | ||
| N-Channel Electrical Characteristics | |||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = 250A | 20V | - | V |
| Zero gate voltage drain current | IDSS | VDS = 20V,VGS = 0V | 1 A | - | |
| Gate-body leakage current | IGSS | VGS =12V, VDS = 0V | 0.1 A | - | |
| Gate threshold voltage | VGS(th) | VDS =VGS, ID = 250A | 0.5 - 1.0V | - | |
| Drain-source on-resistance | RDS(on) | VGS = 4.5V, ID = 10A | 8 - 10 m | - | |
| Drain-source on-resistance | RDS(on) | VGS = 2.5V, ID = 8A | 10 - 15 m | - | |
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | 1196 pF | - | |
| Output Capacitance | Coss | VDS=10V , VGS=0V , f=1MHz | 178 pF | - | |
| Reverse Transfer Capacitance | Crss | VDS=10V , VGS=0V , f=1MHz | 146 pF | - | |
| Total gate charge | Qg | VDS=10V , VGS=4.5V , ID=10A | 13.4 nC | - | |
| Gate-source charge | Qgs | VDS=10V , VGS=4.5V , ID=10A | 2.6 nC | - | |
| Gate-drain charge | Qgd | VDS=10V , VGS=4.5V , ID=10A | 3.4 nC | - | |
| Turn-on delay time | td(on) | VDD=10V , VGS=4.5V , RG=3.3, ID=15A | 7.8 ns | - | |
| Turn-on rise time | tr | VDD=10V , VGS=4.5V , RG=3.3, ID=15A | 19.4 ns | - | |
| Turn-off delay time | td(off) | VDD=10V , VGS=4.5V , RG=3.3, ID=15A | 31 ns | - | |
| Turn-off fall time | tf | VDD=10V , VGS=4.5V , RG=3.3, ID=15A | 12 ns | - | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 V | - | |
| P-Channel Electrical Characteristics | |||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | - | -20V | V |
| Zero gate voltage drain current | IDSS | VDS = -20V,VGS = 0V | - | -1 A | |
| Gate-body leakage current | IGSS | VGS =12V, VDS = 0V | - | 100 nA | |
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | - | -0.5 - -1.0 V | |
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-10A | - | 9 - 11.5 m | |
| Drain-source on-resistance | RDS(on) | VGS =-2.5V, ID =-8A | - | 11 - 15 m | |
| Input Capacitance | Ciss | VDS =-10V, VGS =0V, f = 1MHz | - | 2872 pF | |
| Output Capacitance | Coss | VDS =-10V, VGS =0V, f = 1MHz | - | 332 pF | |
| Reverse Transfer Capacitance | Crss | VDS =-10V, VGS =0V, f = 1MHz | - | 274 pF | |
| Turn-on delay time | td(on) | VDD =-10V, RL = 4.7 VGEN =-10V,RGEN = 4.5 | - | 8 ns | |
| Turn-on rise time | tr | VDD =-10V, RL = 4.7 VGEN =-10V,RGEN = 4.5 | - | 33 ns | |
| Turn-off delay time | td(off) | VDD =-10V, RL = 4.7 VGEN =-10V,RGEN = 4.5 | - | 132 ns | |
| Turn-off fall time | tf | VDD =-10V, RL = 4.7 VGEN =-10V,RGEN = 4.5 | - | 131 ns | |
| Total gate charge | Qg | VDS =-10V, VGS =-4.5V, ID =-8A | - | 72.8 nC | |
| Gate-source charge | Qgs | VDS =-10V, VGS =-4.5V, ID =-8A | - | 6.7 nC | |
| Gate-drain charge | Qgd | VDS =-10V, VGS =-4.5V, ID =-8A | - | 10.3 nC | |
| Body Diode Voltage | VSD | IS=-1A, VGS = 0V | - | -1.2 V | |
| Package Information (PDFN5x6-8L) | |||||
| Dimension | Symbol | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | |
| A3 | 0.254 REF. | 0.010 REF. | |||
| D | 4.944 | 5.096 | 0.195 | 0.201 | |
| E | 5.974 | 6.126 | 0.235 | 0.241 | |
| D1 | 1.470 | 1.870 | 0.058 | 0.074 | |
| D2 | 0.470 | 0.870 | 0.019 | 0.034 | |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | |
| D3 | 4.824 | 4.976 | 0.190 | 0.196 | |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | |
| k | 1.190 | 1.390 | 0.047 | 0.055 | |
| b | 0.350 | 0.450 | 0.014 | 0.018 | |
| e | 1.270 TYP. | 0.050 TYP. | |||
| L | 0.559 | 0.711 | 0.022 | 0.028 | |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | |
| H | 0.574 | 0.726 | 0.023 | 0.029 | |
| 10 | 12 | 10 | 12 | ||
2505291610_Siliup-SP2011ACNK_C48888439.pdf
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