N Channel MOSFET 30 Volt Siliup SP30N06GP8 Featuring Low Gate Charge and Single Pulse Avalanche Test

Key Attributes
Model Number: SP30N06GP8
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@10V;9.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
240pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
625pF
Gate Charge(Qg):
7.1nC@10V
Mfr. Part #:
SP30N06GP8
Package:
SOP-8L
Product Description

Product Overview

The SP30N06GP8 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications and DC-DC converters. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: SP30N06GP8
  • Technology: Advanced Split Gate Trench Technology
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol Rating Unit Test Condition
Product Summary
V(BR)DSS V(BR)DSS 30 V
RDS(on) TYP RDS(on) 6 (at 10V), 9.4 (at 4.5V) m
ID ID 18 A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID 18 A
Continuous Drain Current (Ta=100C) ID 12 A
Pulse Drain Current Tested IDM 72 A
Single Pulse Avalanche Energy1 EAS 72 mJ
Power Dissipation PD 3 W
Thermal Resistance Junction-to-Ambient RJA 41.67 C/W
Storage Temperature Range TJ -55 to 150 C
Operating Junction Temperature Range TSTG -55 to 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BV DSS 30 V VGS=0V , ID=250uA
Drain Cut-Off Current IDSS - 1 uA VDS=30V , VGS=0V
Gate Leakage Current IGSS - 100 nA VGS=20V , VDS=0V
Gate Threshold Voltage VGS(th) 1 1.7 2.5 V VGS=VDS , ID =250uA
Drain-Source ON Resistance RDS(ON) - 6 8 m VGS=10V , ID=12A
Drain-Source ON Resistance RDS(ON) - 9.4 11 m VGS=4.5V , ID=12A
Dynamic Characteristics
Input Capacitance Ciss - 625 - pF VDS=15V,VGS=0V,f=1MHZ
Output Capacitance Coss - 240 - pF
Reverse Transfer Capacitance Crss - 25 - pF
Total Gate Charge Qg - 7.1 - nC VGS=10V,VDS=15V,ID=12A
Gate-Source Charge Qgs - 2.2 - nC
Gate-Drain Charge Qgd - 3.1 - nC
Switching Characteristics
Turn-On Delay Time td(on) - 7 - nS VGS=10V,VDD=15V, ID=12A, RGEN=2
Rise Time tr - 18.8 - nS
Turn-Off Delay Time td(off) - 19.5 - nS
Fall Time tf - 3.4 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD - - 1.2 V IS =1A, VGS = 0V
Maximum Body-Diode Continuous Current IS - - 18 A
Reverse Recovery Time trr - - 11 nS IS=15A, di/dt=100A/us, TJ=25
Reverse Recovery Charge Qrr - - 18 nC
Package Information
Package Type SOP-8L
Device Code 30N06G
Order Information Device Package Unit/Tape
SP30N06GP8 SOP-8L 4000
SOP-8L Package Dimensions (Millimeters)
Symbol Dimensions Min. Max.
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e 1.27 REF.
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
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2504101957_Siliup-SP30N06GP8_C42403234.pdf
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