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quality Small SOT-723 PNP Transistor Slkor MMBT3906M Complementary to MMBT3904M for Electronic Applications factory
quality Small SOT-723 PNP Transistor Slkor MMBT3906M Complementary to MMBT3904M for Electronic Applications factory

Small SOT-723 PNP Transistor Slkor MMBT3906M Complementary to MMBT3904M for Electronic Applications

Key Attributes
Model Number: MMBT3906M
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
300@10mA,1V
Transition Frequency(fT):
300MHz
Type:
PNP
Vce Saturation(VCE(sat)):
300mV@50mA,5mA
Pd - Power Dissipation:
100mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3906M
Package:
SOT-723
Product Description

Product Overview

The MMBT3906M is a PNP transistor designed as a complementary component to the MMBT3904M. It features a small SOT-723 package and is suitable for various electronic applications. This device offers key electrical characteristics and absolute maximum ratings for reliable operation.

Product Attributes

  • Complementary to MMBT3904M
  • Package Type: SOT-723

Technical Specifications

Absolute Maximum Ratings (Ta = 25C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC (Continuous) Collector Current -0.2 A
PC Power Dissipation 100 mW
RJA Thermal Resistance from Junction to Ambient 1250 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55~+150
Electrical Characteristics (Ta = 25C)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-40V, IE=0 -100 nA
Collector cut-off current ICEX VCE=-30V, VEB(off)=-3V -50 nA
Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA
DC current gain hFE(1) VCE=-1V, IC=-10mA 100 300
DC current gain hFE(2) VCE=-1V, IC=-50mA 60
DC current gain hFE(3) VCE=-2V, IC=-100mA 30
Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.3 V
Base-emitter saturation voltage VBE(sat) IC=-50mA, IB=-5mA -0.95 V
Transition frequency fT VCE=-20V, IC=-10mA, f=100MHz 300 MHz
Delay time td VCC=-3V, VBE(off)=-0.5V, IC=-10mA 35 ns
Rise time tr VCC=-3V, IC=-10mA, IB1=IB2=-1mA 35 ns
Storage time ts VCC=-3V, IC=-10mA, IB1=IB2=-1mA 225 ns
Fall time tf VCC=-3V, IC=-10mA, IB1=IB2=-1mA 75 ns
Dimensions (mm)
Symbol A A1 b b1 c D E E1
Min 0.43 0.05 0.17 0.27 0.08 1.15 1.25 0.15
Max 0.50 0.17 0.27 0.37 0.15 0.25 0.75 0.85

2309281726_Slkor-MMBT3906M_C18208591.pdf

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